NTMFS5H409NLT3G
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onsemi NTMFS5H409NLT3G

Manufacturer No:
NTMFS5H409NLT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 41A/270A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTMFS5H409NLT3G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed to offer excellent electrical characteristics, making it suitable for a variety of power management and switching applications. With its robust construction and advanced technology, the NTMFS5H409NLT3G provides reliable operation in demanding environments.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Continuous Drain Current (Id) @ 25°CSee datasheet for detailed current ratings

Key Features

  • High drain current capability
  • Low on-resistance (Rds(on)) for efficient power handling
  • High voltage tolerance (40V) for robust operation in various applications
  • Compact package design for space-efficient solutions
  • High reliability and durability in demanding environments

Applications

The NTMFS5H409NLT3G is versatile and can be used in a range of applications, including:

  • Power management and switching circuits
  • Automotive systems, such as 48V-12V DC-DC converters
  • Industrial power supplies and motor control
  • Consumer electronics requiring high power efficiency

Q & A

  1. What is the drain to source voltage (Vdss) of the NTMFS5H409NLT3G?
    The drain to source voltage (Vdss) is 40V.
  2. What type of FET is the NTMFS5H409NLT3G?
    The NTMFS5H409NLT3G is an N-Channel MOSFET.
  3. What is the technology used in the NTMFS5H409NLT3G?
    The technology used is MOSFET (Metal Oxide).
  4. What are some common applications of the NTMFS5H409NLT3G?
    Common applications include power management, automotive systems, industrial power supplies, and consumer electronics.
  5. What is the continuous drain current (Id) of the NTMFS5H409NLT3G at 25°C?
    For detailed current ratings, refer to the datasheet.
  6. Why is the NTMFS5H409NLT3G suitable for high-power applications?
    The NTMFS5H409NLT3G is suitable due to its high drain current capability and low on-resistance (Rds(on)).
  7. What is the package type of the NTMFS5H409NLT3G?
    The package type is specified in the datasheet, typically a compact design for space efficiency.
  8. How reliable is the NTMFS5H409NLT3G in demanding environments?
    The NTMFS5H409NLT3G is designed for high reliability and durability in demanding environments.
  9. Where can I find detailed specifications and ordering information for the NTMFS5H409NLT3G?
    Detailed specifications and ordering information can be found on the onsemi website and through distributors like Mouser and DigiKey.
  10. Can the NTMFS5H409NLT3G be used in automotive applications?
    Yes, it can be used in automotive applications, such as 48V-12V DC-DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NTMFS5H409NLT1G
NTMFS5H409NLT1G
MOSFET N-CH 40V 41A/270A 5DFN

Similar Products

Part Number NTMFS5H409NLT3G NTMFS5H400NLT3G NTMFS5H409NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 270A (Tc) 46A (Ta), 330A (Tc) 41A (Ta), 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 50A, 10V - 1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V 11 nC @ 4.5 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 20 V 7700 pF @ 20 V 5700 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.2W (Ta), 140W (Tc) 3.3W (Ta), 160W (Tc) 3.2W (Ta), 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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