STD60NF06T4
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STMicroelectronics STD60NF06T4

Manufacturer No:
STD60NF06T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 60A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD60NF06T4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This device is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications. The STD60NF06T4 is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in various ECOPACK® grades.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 60 V
VGS (Gate-source voltage) ±20 V
ID (Continuous drain current at TC = 25 °C) 60 A
ID (Continuous drain current at TC = 100 °C) 42 A
IDM (Pulsed drain current) 240 A
PTOT (Total dissipation at TC = 25 °C) 110 W
RDS(on) (Static drain-source on-resistance) 0.014 - 0.016 Ω
Tj (Operating junction temperature range) -55 to 175 °C
Tstg (Storage temperature range) -55 to 175 °C

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • High efficiency due to low RDS(on)
  • Suitable for high-frequency switching applications
  • ECOPACK® compliant packages for environmental sustainability

Applications

  • Advanced high-efficiency isolated DC-DC converters
  • Telecom and computer applications
  • Applications requiring low gate charge driving
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage of the STD60NF06T4?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical static drain-source on-resistance of the STD60NF06T4?

    The typical static drain-source on-resistance (RDS(on)) is 0.014 Ω.

  3. What is the maximum continuous drain current at 25 °C for the STD60NF06T4?

    The maximum continuous drain current (ID) at 25 °C is 60 A.

  4. What is the operating junction temperature range for the STD60NF06T4?

    The operating junction temperature range (Tj) is -55 to 175 °C.

  5. What package type is the STD60NF06T4 available in?

    The STD60NF06T4 is available in a DPAK (TO-252) package.

  6. What are some of the key features of the STD60NF06T4?

    Key features include exceptional dv/dt capability, 100% avalanche tested, low gate charge, and high efficiency due to low RDS(on).

  7. What are the typical applications for the STD60NF06T4?

    Typical applications include advanced high-efficiency isolated DC-DC converters, telecom and computer applications, and applications requiring low gate charge driving.

  8. Is the STD60NF06T4 environmentally compliant?

    Yes, the STD60NF06T4 is available in ECOPACK® compliant packages.

  9. What is the maximum total dissipation at 25 °C for the STD60NF06T4?

    The maximum total dissipation (PTOT) at 25 °C is 110 W.

  10. What is the thermal resistance junction-case for the STD60NF06T4?

    The thermal resistance junction-case (Rthj-case) is 1.36 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD60NF06T4 STD30NF06T4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 30A, 10V 28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 25 V 1750 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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