STD10NM60ND
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STMicroelectronics STD10NM60ND

Manufacturer No:
STD10NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD10NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II technology, which offers advanced characteristics such as low input capacitance, low gate charge, and high dv/dt ruggedness. The STD10NM60ND is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 8 A
RDS(on) (On-Resistance) 570 mΩ (typ.)
VGS(th) (Threshold Voltage) 2-4 V
Qg (Gate Charge) Low nC
Ciss (Input Capacitance) Low pF
Package DPAK -

Key Features

  • FDmesh™ II technology for enhanced performance
  • Low input capacitance and gate charge
  • Low on-resistance (RDS(on)) of 570 mΩ (typ.)
  • High dv/dt ruggedness
  • 100% avalanche tested
  • Intrinsic fast-recovery body diode

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Switching applications requiring high voltage and current handling
  • Industrial and automotive power management systems

Q & A

  1. What is the maximum drain-source voltage of the STD10NM60ND?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STD10NM60ND?

    The typical on-resistance (RDS(on)) is 570 mΩ.

  3. What package type is the STD10NM60ND available in?

    The STD10NM60ND is available in a DPAK package.

  4. What are the key benefits of the FDmesh™ II technology used in the STD10NM60ND?

    The FDmesh™ II technology offers low input capacitance, low gate charge, and high dv/dt ruggedness.

  5. Is the STD10NM60ND suitable for high-frequency switching applications?

    Yes, due to its low input capacitance and gate charge, it is suitable for high-frequency switching applications.

  6. What is the maximum drain current of the STD10NM60ND?

    The maximum drain current (ID) is 8 A.

  7. Does the STD10NM60ND have a built-in body diode?

    Yes, it has an intrinsic fast-recovery body diode.

  8. Is the STD10NM60ND 100% avalanche tested?

    Yes, the STD10NM60ND is 100% avalanche tested.

  9. What are some common applications for the STD10NM60ND?

    Common applications include power supplies, DC-DC converters, motor control, and industrial power management systems.

  10. Where can I find detailed specifications for the STD10NM60ND?

    Detailed specifications can be found on the official STMicroelectronics website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:577 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD10NM60ND STD13NM60ND STD11NM60ND STD10NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 11A (Tc) 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 24.5 nC @ 10 V 30 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 577 pF @ 50 V 845 pF @ 50 V 850 pF @ 50 V 540 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 70W (Tc) 109W (Tc) 90W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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