STD10NM60ND
  • Share:

STMicroelectronics STD10NM60ND

Manufacturer No:
STD10NM60ND
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD10NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ II technology, which offers advanced characteristics such as low input capacitance, low gate charge, and high dv/dt ruggedness. The STD10NM60ND is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 8 A
RDS(on) (On-Resistance) 570 mΩ (typ.)
VGS(th) (Threshold Voltage) 2-4 V
Qg (Gate Charge) Low nC
Ciss (Input Capacitance) Low pF
Package DPAK -

Key Features

  • FDmesh™ II technology for enhanced performance
  • Low input capacitance and gate charge
  • Low on-resistance (RDS(on)) of 570 mΩ (typ.)
  • High dv/dt ruggedness
  • 100% avalanche tested
  • Intrinsic fast-recovery body diode

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Switching applications requiring high voltage and current handling
  • Industrial and automotive power management systems

Q & A

  1. What is the maximum drain-source voltage of the STD10NM60ND?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STD10NM60ND?

    The typical on-resistance (RDS(on)) is 570 mΩ.

  3. What package type is the STD10NM60ND available in?

    The STD10NM60ND is available in a DPAK package.

  4. What are the key benefits of the FDmesh™ II technology used in the STD10NM60ND?

    The FDmesh™ II technology offers low input capacitance, low gate charge, and high dv/dt ruggedness.

  5. Is the STD10NM60ND suitable for high-frequency switching applications?

    Yes, due to its low input capacitance and gate charge, it is suitable for high-frequency switching applications.

  6. What is the maximum drain current of the STD10NM60ND?

    The maximum drain current (ID) is 8 A.

  7. Does the STD10NM60ND have a built-in body diode?

    Yes, it has an intrinsic fast-recovery body diode.

  8. Is the STD10NM60ND 100% avalanche tested?

    Yes, the STD10NM60ND is 100% avalanche tested.

  9. What are some common applications for the STD10NM60ND?

    Common applications include power supplies, DC-DC converters, motor control, and industrial power management systems.

  10. Where can I find detailed specifications for the STD10NM60ND?

    Detailed specifications can be found on the official STMicroelectronics website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:577 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.22
10

Please send RFQ , we will respond immediately.

Same Series
STP10NM60ND
STP10NM60ND
MOSFET N-CH 600V 8A TO220
STD10NM60ND
STD10NM60ND
MOSFET N-CH 600V 8A DPAK
STD60NF06T4
STD60NF06T4
MOSFET N-CH 60V 60A DPAK
STD14NM50NAG
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD30NF06LAG
STD30NF06LAG
MOSFET N-CH 60V 28A DPAK
STB100NF04T4
STB100NF04T4
MOSFET N-CH 40V 120A D2PAK
STW74NF30
STW74NF30
MOSFET N-CH 300V 60A TO247
STW75NF30AG
STW75NF30AG
MOSFET N-CH 300V 60A TO247
STP100NF04
STP100NF04
MOSFET N-CH 40V 120A TO220AB
STP90N55F4
STP90N55F4
MOSFET N-CH 55V 90A TO220AB
STD22NF06AG
STD22NF06AG
MOSFET N-CH 60V 23A DPAK
STI100N10F7
STI100N10F7
MOSFET N-CH 100V 80A I2PAK

Similar Products

Part Number STD10NM60ND STD13NM60ND STD11NM60ND STD10NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 11A (Tc) 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 24.5 nC @ 10 V 30 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 577 pF @ 50 V 845 pF @ 50 V 850 pF @ 50 V 540 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 70W (Tc) 109W (Tc) 90W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA