STD30NF06LAG
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STMicroelectronics STD30NF06LAG

Manufacturer No:
STD30NF06LAG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 28A DPAK
Delivery:
Payment:
iso14001
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iso13485

Product Introduction

Overview

The STD30NF06LAG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. It is part of the STripFET™ II series, which is designed to minimize input capacitance and gate charge, making it ideal for high-efficiency applications. This MOSFET is packaged in a DPAK (TO-252) package and is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 60 V
VGS (Gate-source voltage) ±20 V
ID (Drain current, continuous) at Tcase = 25 °C 35 A
ID (Drain current, continuous) at Tcase = 100 °C 25 A
IDM (Drain current, pulsed) 140 A
RDS(on) (Static drain-source on-resistance) at VGS = 10 V, ID = 18 A 0.022 - 0.028 Ω
VGS(th) (Gate threshold voltage) 1 - 1.7 - 2.5 V
Tj (Operating junction temperature range) -55 to 175 °C
Rthj-case (Thermal resistance junction-case) 2.14 °C/W

Key Features

  • AEC-Q101 qualified for automotive applications.
  • Low threshold drive and minimized gate charge.
  • High efficiency due to low RDS(on) (0.022 Ω typical).
  • High current capability (35 A continuous, 140 A pulsed).
  • Wide operating junction temperature range (-55 to 175 °C).
  • ECOPACK® package options for environmental compliance.

Applications

  • Switching applications in advanced high-efficiency isolated DC-DC converters.
  • Telecom and computer applications requiring low gate charge drive.
  • Any application with low gate charge drive requirements.
  • Automotive systems due to its AEC-Q101 qualification.

Q & A

  1. What is the maximum drain-source voltage of the STD30NF06LAG?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance of the STD30NF06LAG?

    The typical static drain-source on-resistance (RDS(on)) is 0.022 Ω at VGS = 10 V and ID = 18 A.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at Tcase = 25 °C is 35 A.

  4. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is from 1 V to 2.5 V.

  5. Is the STD30NF06LAG suitable for automotive applications?
  6. What package type is the STD30NF06LAG available in?
  7. What is the thermal resistance junction-case of the STD30NF06LAG? thj-case) is 2.14 °C/W.

  8. What are the typical switching times for the STD30NF06LAG?
  9. What is the maximum storage temperature range for the STD30NF06LAG?
  10. Does the STD30NF06LAG have any environmental compliance certifications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD30NF06LAG STD20NF06LAG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 5V, 10V
Rds On (Max) @ Id, Vgs - 40mOhm @ 12A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 13 nC @ 5 V
Vgs (Max) - ±18V
Input Capacitance (Ciss) (Max) @ Vds - 660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 60W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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