NVMFS6B25NLT1G
  • Share:

onsemi NVMFS6B25NLT1G

Manufacturer No:
NVMFS6B25NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 8A/33A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS6B25NLT1G is a single N-Channel power MOSFET produced by onsemi. This component is designed for high-performance applications requiring efficient power handling. It features a 100V drain-to-source voltage (Vdss) and a maximum on-resistance (Rds On) of 24 mΩ at 10V gate voltage. The MOSFET is packaged in an 8-PowerTDFN, 5-lead configuration, making it suitable for surface mount applications. Despite being scheduled for obsolescence, it remains a reliable choice for various electronic systems due to its robust specifications and automotive-grade qualification (AEC-Q101).

Key Specifications

Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8 A (Ta), 33 A (Tc)
On-Resistance (Rds On) @ Id, Vgs 24 mΩ @ 20 A, 10 V
Gate Threshold Voltage (Vgs(th)) @ Id 3 V @ 250 µA
Gate Charge (Qg) @ Vgs 13.5 nC @ 10 V
Maximum Gate Voltage (Vgs) ±16 V
Input Capacitance (Ciss) @ Vds 905 pF @ 25 V
Power Dissipation (Max) 3.6 W (Ta), 62 W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Qualification AEC-Q101
Package / Case 8-PowerTDFN, 5 Leads

Key Features

  • High Voltage Handling: The NVMFS6B25NLT1G can handle up to 100V drain-to-source voltage, making it suitable for high-voltage applications.
  • Low On-Resistance: With a maximum on-resistance of 24 mΩ at 10V gate voltage, this MOSFET minimizes power losses and enhances efficiency.
  • Automotive Grade: Qualified to AEC-Q101 standards, ensuring reliability and performance in automotive and other demanding environments.
  • Compact Packaging: The 8-PowerTDFN, 5-lead package is ideal for surface mount applications, offering a balance between performance and space efficiency.
  • Broad Operating Temperature Range: Operates from -55°C to 175°C, making it versatile for various thermal conditions.

Applications

The NVMFS6B25NLT1G is suitable for a variety of applications, including:

  • Automotive Systems: Ideal for use in automotive electronics due to its AEC-Q101 qualification and robust specifications.
  • Industrial Power Systems: Can be used in industrial power supplies, motor control, and other high-power applications.
  • Consumer Electronics: Suitable for use in consumer electronic devices that require efficient power management.
  • Power Management Systems: Useful in DC-DC converters, power amplifiers, and other power management circuits.

Q & A

  1. What is the drain-to-source voltage (Vdss) of the NVMFS6B25NLT1G?

    The drain-to-source voltage (Vdss) is 100 V.

  2. What is the maximum on-resistance (Rds On) of the NVMFS6B25NLT1G?

    The maximum on-resistance (Rds On) is 24 mΩ at 10V gate voltage.

  3. What is the continuous drain current (Id) at 25°C for the NVMFS6B25NLT1G?

    The continuous drain current (Id) at 25°C is 8 A (Ta) and 33 A (Tc).

  4. What is the gate threshold voltage (Vgs(th)) of the NVMFS6B25NLT1G?

    The gate threshold voltage (Vgs(th)) is 3 V at 250 µA.

  5. What is the maximum gate voltage (Vgs) for the NVMFS6B25NLT1G?

    The maximum gate voltage (Vgs) is ±16 V.

  6. What is the operating temperature range of the NVMFS6B25NLT1G?

    The operating temperature range is -55°C to 175°C (TJ).

  7. Is the NVMFS6B25NLT1G qualified for automotive use?

    Yes, it is qualified to AEC-Q101 standards.

  8. What package type does the NVMFS6B25NLT1G come in?

    The NVMFS6B25NLT1G comes in an 8-PowerTDFN, 5-lead package.

  9. Is the NVMFS6B25NLT1G still in production?

    No, it is scheduled for obsolescence and will be discontinued by the manufacturer.

  10. Where can I find more detailed specifications for the NVMFS6B25NLT1G?

    You can find detailed specifications on the official onsemi website, or through distributors like Mouser, Digi-Key, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta), 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 62W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

-
48

Please send RFQ , we will respond immediately.

Same Series
NVMFS6B25NLWFT1G
NVMFS6B25NLWFT1G
NVMFS6B25 - SINGLE N-CHANNEL POW
NVMFS6B25NLT3G
NVMFS6B25NLT3G
MOSFET N-CH 100V 8A/33A 5DFN
NVMFS6B25NLWFT3G
NVMFS6B25NLWFT3G
MOSFET N-CH 100V 8A/33A 5DFN

Similar Products

Part Number NVMFS6B25NLT1G NVMFS6B25NLT3G NVMFS6B75NLT1G NVMFS6B85NLT1G NVMFS6B05NLT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 33A (Ta) 8A (Ta), 33A (Ta) 7A (Ta), 28A (Tc) 5.6A (Ta), 19A (Tc) 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 20A, 10V 24mOhm @ 20A, 10V 30mOhm @ 10A, 10V 46mOhm @ 10A, 10V 5.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 13.5 nC @ 10 V 11.3 nC @ 10 V 7.9 nC @ 10 V 6.8 nC @ 10 V
Vgs (Max) ±16V ±16V ±16V ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 25 V 905 pF @ 25 V 740 pF @ 25 V 480 pF @ 25 V 3980 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 3.6W (Ta), 62W (Tc) 3.6W (Ta), 62W (Tc) 3.5W (Ta), 56W (Tc) 3.5W (Ta), 42W (Tc) 3.8W (Ta), 165W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD