BD677AG
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onsemi BD677AG

Manufacturer No:
BD677AG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 60V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD677AG is a plastic, medium-power silicon NPN Darlington transistor produced by onsemi. This device is part of a series that includes the BD675AG, BD679AG, and BD681G, and is designed for use as output devices in complementary general-purpose amplifier applications. The BD677AG is known for its high DC current gain and monolithic construction, making it suitable for a variety of electronic circuits.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 4.0 Adc
Base Current IB 1.0 Adc
Total Device Dissipation @ TC = 25°C PD 40 W
Derate above 25°C 0.32 W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C
Thermal Resistance, Junction-to-Case RJC 3.13 °C/W

Key Features

  • High DC Current Gain: The BD677AG offers a high DC current gain, making it suitable for applications requiring high current amplification.
  • Monolithic Construction: The transistor is built with a monolithic construction, ensuring reliability and stability in operation.
  • Complementary Devices: It is complementary to other onsemi devices such as BD676, 676A, 678, 678A, 680, 680A, and 682.
  • Equivalent Devices: The BD677AG is equivalent to MJE 801, making it a versatile choice for various applications.
  • Pb-Free and RoHS Compliant: The device is lead-free and RoHS compliant, adhering to environmental and safety standards.

Applications

The BD677AG is used in a variety of applications, including:

  • General-Purpose Amplifiers: It serves as an output device in complementary general-purpose amplifier circuits.
  • Power Amplifiers: Its high current gain and medium power handling capabilities make it suitable for power amplifier applications.
  • Automotive and Industrial Systems: The transistor can be used in automotive and industrial systems where high reliability and stability are required.

Q & A

  1. What is the collector-emitter voltage rating of the BD677AG?

    The collector-emitter voltage rating of the BD677AG is 60 Vdc.

  2. What is the maximum collector current of the BD677AG?

    The maximum collector current is 4.0 Adc.

  3. What is the thermal resistance, junction-to-case, of the BD677AG?

    The thermal resistance, junction-to-case, is 3.13 °C/W.

  4. Is the BD677AG Pb-Free and RoHS compliant?
  5. What is the operating and storage junction temperature range of the BD677AG?

    The operating and storage junction temperature range is –55 to +150 °C.

  6. What are the equivalent devices to the BD677AG?

    The BD677AG is equivalent to MJE 801.

  7. What is the total device dissipation at TC = 25°C for the BD677AG?

    The total device dissipation at TC = 25°C is 40 W.

  8. What is the base-emitter on voltage of the BD677AG?

    The base-emitter on voltage is approximately 2.5 Vdc.

  9. What is the collector-emitter saturation voltage of the BD677AG?

    The collector-emitter saturation voltage is approximately 2.5 Vdc.

  10. What package type is the BD677AG available in?

    The BD677AG is available in the TO-225 package.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.8V @ 40mA, 2A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
BD679
BD679
TRANS NPN DARL 80V 4A SOT32-3
BD681G
BD681G
TRANS NPN DARL 100V 4A TO126
BD681
BD681
TRANS NPN DARL 100V 4A SOT32-3
BD675AG
BD675AG
TRANS NPN DARL 45V 4A TO126
BD675
BD675
TRANS NPN DARL 45V 4A TO126
BD675A
BD675A
TRANS NPN DARL 45V 4A TO126
BD675G
BD675G
TRANS NPN DARL 45V 4A TO126
BD677AG
BD677AG
TRANS NPN DARL 60V 4A TO126
BD677G
BD677G
TRANS NPN DARL 60V 4A TO126
BD679AG
BD679AG
TRANS NPN DARL 80V 4A TO126

Similar Products

Part Number BD677AG BD677AS BD677G BD678AG BD679AG BD675AG BD676AG BD677A
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V 60 V 80 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126-3 TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3

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