BD677G
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onsemi BD677G

Manufacturer No:
BD677G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 60V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD677G is a medium-power silicon NPN Darlington transistor produced by onsemi. This device is part of the BD6xx series, which includes various voltage and current ratings, making it versatile for different applications. The BD677G is particularly suited for use as output devices in complementary general-purpose amplifier applications due to its high DC current gain and monolithic construction.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 4.0 Adc
Base Current IB 1.0 Adc
Total Device Dissipation @ TC = 25°C PD 40 W
Derate above 25°C 0.32 W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C
Thermal Resistance, Junction-to-Case RJC 3.13 °C/W

Key Features

  • High DC Current Gain: The BD677G offers high DC current gain, making it suitable for applications requiring significant current amplification.
  • Monolithic Construction: The transistor is built with a monolithic construction, enhancing its reliability and performance.
  • Complementary Devices: It is complementary to other devices in the BD6xx series, such as BD676, 676A, 678, 678A, 680, 680A, and 682.
  • Pb-Free and RoHS Compliant: The BD677G is lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • High Voltage and Current Ratings: With a collector-emitter voltage rating of 60V and a collector current rating of 4A, it is suitable for medium-power applications.

Applications

The BD677G is designed for use in various applications, including:

  • General-Purpose Amplifiers: It is well-suited for use as output devices in complementary general-purpose amplifier applications.
  • Power Switching: Its high current and voltage ratings make it suitable for power switching applications.
  • Motor Control: It can be used in motor control circuits due to its ability to handle significant current and voltage.
  • Automotive and Industrial Systems: The BD677G can be used in automotive and industrial systems where medium-power transistor capabilities are required.

Q & A

  1. What is the collector-emitter voltage rating of the BD677G?

    The collector-emitter voltage rating of the BD677G is 60 Vdc.

  2. What is the maximum collector current for the BD677G?

    The maximum collector current for the BD677G is 4.0 Adc.

  3. Is the BD677G Pb-Free and RoHS compliant?

    Yes, the BD677G is lead-free and RoHS compliant.

  4. What is the thermal resistance, junction-to-case, for the BD677G?

    The thermal resistance, junction-to-case, for the BD677G is 3.13 °C/W.

  5. What is the operating and storage junction temperature range for the BD677G?

    The operating and storage junction temperature range for the BD677G is –55 to +150 °C.

  6. What are some common applications for the BD677G?

    The BD677G is commonly used in general-purpose amplifiers, power switching, motor control, and automotive and industrial systems.

  7. What is the DC current gain of the BD677G?

    The DC current gain (hFE) of the BD677G is 750 at IC = 1.5 Adc and VCE = 3.0 Vdc.

  8. What is the collector-emitter saturation voltage for the BD677G?

    The collector-emitter saturation voltage (VCE(sat)) for the BD677G is 2.5 Vdc at IC = 1.5 Adc and IB = 30 mAdc.

  9. What package type is the BD677G available in?

    The BD677G is available in a TO-225 package.

  10. How many units are typically shipped per box for the BD677G?

    The BD677G is typically shipped in boxes of 500 units.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number BD677G BD679G BD678G BD675G BD676G BD677 BD677A BD677AG
Manufacturer onsemi onsemi onsemi onsemi onsemi STMicroelectronics STMicroelectronics onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 45 V 45 V 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 2A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3 SOT-32-3 TO-126

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