BD677G
  • Share:

onsemi BD677G

Manufacturer No:
BD677G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 60V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD677G is a medium-power silicon NPN Darlington transistor produced by onsemi. This device is part of the BD6xx series, which includes various voltage and current ratings, making it versatile for different applications. The BD677G is particularly suited for use as output devices in complementary general-purpose amplifier applications due to its high DC current gain and monolithic construction.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 4.0 Adc
Base Current IB 1.0 Adc
Total Device Dissipation @ TC = 25°C PD 40 W
Derate above 25°C 0.32 W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C
Thermal Resistance, Junction-to-Case RJC 3.13 °C/W

Key Features

  • High DC Current Gain: The BD677G offers high DC current gain, making it suitable for applications requiring significant current amplification.
  • Monolithic Construction: The transistor is built with a monolithic construction, enhancing its reliability and performance.
  • Complementary Devices: It is complementary to other devices in the BD6xx series, such as BD676, 676A, 678, 678A, 680, 680A, and 682.
  • Pb-Free and RoHS Compliant: The BD677G is lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • High Voltage and Current Ratings: With a collector-emitter voltage rating of 60V and a collector current rating of 4A, it is suitable for medium-power applications.

Applications

The BD677G is designed for use in various applications, including:

  • General-Purpose Amplifiers: It is well-suited for use as output devices in complementary general-purpose amplifier applications.
  • Power Switching: Its high current and voltage ratings make it suitable for power switching applications.
  • Motor Control: It can be used in motor control circuits due to its ability to handle significant current and voltage.
  • Automotive and Industrial Systems: The BD677G can be used in automotive and industrial systems where medium-power transistor capabilities are required.

Q & A

  1. What is the collector-emitter voltage rating of the BD677G?

    The collector-emitter voltage rating of the BD677G is 60 Vdc.

  2. What is the maximum collector current for the BD677G?

    The maximum collector current for the BD677G is 4.0 Adc.

  3. Is the BD677G Pb-Free and RoHS compliant?

    Yes, the BD677G is lead-free and RoHS compliant.

  4. What is the thermal resistance, junction-to-case, for the BD677G?

    The thermal resistance, junction-to-case, for the BD677G is 3.13 °C/W.

  5. What is the operating and storage junction temperature range for the BD677G?

    The operating and storage junction temperature range for the BD677G is –55 to +150 °C.

  6. What are some common applications for the BD677G?

    The BD677G is commonly used in general-purpose amplifiers, power switching, motor control, and automotive and industrial systems.

  7. What is the DC current gain of the BD677G?

    The DC current gain (hFE) of the BD677G is 750 at IC = 1.5 Adc and VCE = 3.0 Vdc.

  8. What is the collector-emitter saturation voltage for the BD677G?

    The collector-emitter saturation voltage (VCE(sat)) for the BD677G is 2.5 Vdc at IC = 1.5 Adc and IB = 30 mAdc.

  9. What package type is the BD677G available in?

    The BD677G is available in a TO-225 package.

  10. How many units are typically shipped per box for the BD677G?

    The BD677G is typically shipped in boxes of 500 units.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
0 Remaining View Similar

In Stock

-
245

Please send RFQ , we will respond immediately.

Same Series
BD681G
BD681G
TRANS NPN DARL 100V 4A TO126
BD681
BD681
TRANS NPN DARL 100V 4A SOT32-3
BD675AG
BD675AG
TRANS NPN DARL 45V 4A TO126
BD679G
BD679G
TRANS NPN DARL 80V 4A TO126
BD675
BD675
TRANS NPN DARL 45V 4A TO126
BD675A
BD675A
TRANS NPN DARL 45V 4A TO126
BD675G
BD675G
TRANS NPN DARL 45V 4A TO126
BD677AG
BD677AG
TRANS NPN DARL 60V 4A TO126
BD677G
BD677G
TRANS NPN DARL 60V 4A TO126
BD679AG
BD679AG
TRANS NPN DARL 80V 4A TO126

Similar Products

Part Number BD677G BD679G BD678G BD675G BD676G BD677 BD677A BD677AG
Manufacturer onsemi onsemi onsemi onsemi onsemi STMicroelectronics STMicroelectronics onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 45 V 45 V 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V 750 @ 2A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126 SOT-32-3 SOT-32-3 TO-126

Related Product By Categories

BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB