Overview
The PMBT4401YS115 is an NPN switching transistor produced by NXP USA Inc. This transistor is part of NXP's extensive portfolio of discrete semiconductors, designed to meet various industrial and consumer application needs. The PMBT4401 is housed in a SOT23 plastic surface-mounted package, making it suitable for a wide range of electronic designs.
Key Specifications
| Parameter | Conditions | Min. | Max. | Unit |
|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open Emitter | - | 60 | V |
| VCEO (Collector-Emitter Voltage) | Open Base | - | 40 | V |
| VEBO (Emitter-Base Voltage) | Open Collector | - | 6 | V |
| IC (Collector Current DC) | - | - | 600 | mA |
| ICM (Peak Collector Current) | - | - | 800 | mA |
| IBM (Peak Base Current) | - | - | 200 | mA |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | 250 | mW |
| Tstg (Storage Temperature) | - | -65 | 150 | °C |
| Tj (Junction Temperature) | - | - | 150 | °C |
| Tamb (Operating Ambient Temperature) | - | -65 | 150 | °C |
Key Features
- High Current Capability: The PMBT4401 can handle a maximum collector current of 600 mA and a peak collector current of 800 mA.
- Low Voltage Operation: It operates with a maximum collector-emitter voltage of 40 V and an emitter-base voltage of 6 V.
- Compact Package: The transistor is housed in a SOT23 plastic surface-mounted package, making it suitable for space-constrained designs.
- High DC Current Gain: The transistor has a DC current gain (hFE) ranging from 20 to 300, depending on the collector current.
- Fast Switching Times: It features fast switching times, including a turn-on time of 35 ns, a delay time of 15 ns, and a turn-off time of 250 ns.
Applications
The PMBT4401YS115 is versatile and can be used in various applications, including:
- Industrial Switching Applications: Suitable for controlling industrial equipment and machinery.
- Consumer Electronics: Used in consumer devices that require reliable switching performance.
- Automotive Electronics: Can be applied in automotive systems where high reliability and efficiency are crucial.
Q & A
- What is the maximum collector current of the PMBT4401YS115?
The maximum collector current is 600 mA.
- What is the maximum collector-emitter voltage of the PMBT4401YS115?
The maximum collector-emitter voltage is 40 V.
- What package type is the PMBT4401YS115 housed in?
The transistor is housed in a SOT23 plastic surface-mounted package.
- What are the typical applications of the PMBT4401YS115?
It is used in industrial switching applications, consumer electronics, and automotive electronics.
- What is the DC current gain (hFE) of the PMBT4401YS115?
The DC current gain ranges from 20 to 300, depending on the collector current.
- What are the switching times of the PMBT4401YS115?
The turn-on time is 35 ns, the delay time is 15 ns, and the turn-off time is 250 ns.
- What is the storage temperature range of the PMBT4401YS115?
The storage temperature range is from -65 °C to 150 °C.
- What is the junction temperature of the PMBT4401YS115?
The junction temperature should not exceed 150 °C.
- What is the total power dissipation of the PMBT4401YS115 at 25 °C ambient temperature?
The total power dissipation is 250 mW at 25 °C ambient temperature.
- Is the PMBT4401YS115 suitable for high-frequency applications?
Yes, it has a transition frequency (fT) of 250 MHz, making it suitable for high-frequency applications.
