Overview
The PBSS5350Z,135 is a 50 V low VCEsat PNP transistor manufactured by Nexperia USA Inc. This transistor is designed to offer high performance and efficiency in various electronic applications. It features a small form factor, which allows for more design flexibility and reduces board space by approximately 75% compared to larger transistors. The PBSS5350Z,135 is known for its low collector-emitter saturation voltage and high collector current capability, making it suitable for a range of applications requiring reliable and efficient transistor operation.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Breakdown Voltage (Vceo) | 50 V |
| Power Dissipation (Pd) | 1.35 W |
| DC Current Gain (hFE@Ic,Vce) | 200 @ 500 mA, 2 V |
| Collector Current (Ic) | Up to 500 mA |
| Collector-Emitter Saturation Voltage (VCEsat) | Low VCEsat |
Key Features
- Low Collector-Emitter Saturation Voltage (VCEsat): Ensures efficient operation with minimal voltage drop.
- High Collector Current Capability: Supports up to 500 mA, making it suitable for applications requiring substantial current handling.
- Small Form Factor: Uses about 75% less board space, enhancing design flexibility and reducing overall component size.
- RoHS and Halogen-Free Compliance: Meets EU/CN RoHS and Nexperia's halogen-free standards, ensuring environmental sustainability and compliance with regulatory requirements.
Applications
The PBSS5350Z,135 transistor is versatile and can be used in a variety of applications, including:
- General Purpose Amplification: Suitable for amplifying signals in audio, video, and other electronic circuits.
- Switching Circuits: Ideal for use in switching applications due to its low VCEsat and high current handling capabilities.
- Automotive Electronics: Can be used in automotive systems where reliability and efficiency are critical.
- Consumer Electronics: Applicable in various consumer electronic devices requiring reliable transistor performance.
Q & A
- What is the collector-emitter breakdown voltage of the PBSS5350Z,135 transistor?
The collector-emitter breakdown voltage (Vceo) is 50 V.
- What is the power dissipation capability of the PBSS5350Z,135 transistor?
The power dissipation (Pd) is 1.35 W.
- What is the DC current gain of the PBSS5350Z,135 transistor?
The DC current gain (hFE) is 200 at 500 mA and 2 V.
- Is the PBSS5350Z,135 transistor RoHS and halogen-free compliant?
- What are the key features of the PBSS5350Z,135 transistor?
- In what types of applications is the PBSS5350Z,135 transistor commonly used?
- How much board space does the PBSS5350Z,135 transistor use compared to larger transistors?
- What is the maximum collector current of the PBSS5350Z,135 transistor?
- Is the PBSS5350Z,135 transistor suitable for high-current applications?
- Where can I find detailed specifications and datasheets for the PBSS5350Z,135 transistor?
