BU508AFTBTU
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onsemi BU508AFTBTU

Manufacturer No:
BU508AFTBTU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 700V 5A TO3PF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BU508AF is a high voltage NPN power transistor manufactured by STMicroelectronics, utilizing diffused collector in planar technology. This transistor is designed with an enhanced high voltage structure to provide updated performance, particularly for the horizontal deflection stage in standard definition CRT (Cathode Ray Tube) displays. Although the specific part number BU508AFTBTU is associated with onsemi, the core specifications and features align closely with the BU508AF from STMicroelectronics.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VBE = 0)1500V
Collector-emitter voltage (IB = 0)700V
Collector-base voltage (IC = 0)9V
Collector current8A
Collector peak current (tP < 5ms)15A
Base current4A
Total dissipation at Tc = 25°C50W
Insulation withstand voltage (RMS) from all three leads to external heatsink2500V
Storage temperature-65 to 150°C
Max. operating junction temperature150°C

Key Features

  • State-of-the-art technology with diffused collector in planar technology
  • Stable performances versus operating temperature variation
  • Low base-drive requirement
  • Tight hFE range at operating collector current
  • High ruggedness
  • Fully insulated power package, U.L. compliant

Applications

  • Horizontal deflection output for CRT TV
  • Switch mode power supplies for CRT TV

Q & A

  1. What is the primary application of the BU508AF transistor? The primary application is for the horizontal deflection stage in standard definition CRT displays.
  2. What is the maximum collector-emitter voltage of the BU508AF? The maximum collector-emitter voltage is 1500 V when VBE = 0.
  3. What is the maximum collector current of the BU508AF? The maximum collector current is 8 A.
  4. What is the maximum base current of the BU508AF? The maximum base current is 4 A.
  5. What is the total dissipation at Tc = 25°C for the BU508AF? The total dissipation at Tc = 25°C is 50 W.
  6. Is the BU508AF package environmentally compliant? Yes, the BU508AF is offered in ECOPACK® packages, which meet environmental requirements and have a Lead-free second level interconnect.
  7. What is the maximum operating junction temperature of the BU508AF? The maximum operating junction temperature is 150 °C.
  8. What are the key features of the BU508AF transistor? Key features include state-of-the-art technology, stable performances versus operating temperature variation, low base-drive requirement, tight hFE range, high ruggedness, and a fully insulated power package.
  9. Can the BU508AF be used in switch mode power supplies? Yes, it can be used in switch mode power supplies for CRT TV.
  10. Is the BU508AF suitable for high-speed switching applications? Yes, it is suitable for high-speed switching applications, particularly in horizontal deflection circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):700 V
Vce Saturation (Max) @ Ib, Ic:1V @ 2A, 4.5A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:2.25 @ 4.5A, 5V
Power - Max:60 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3 Full Pack
Supplier Device Package:TO-3PF
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