NJVMJD31T4G
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onsemi NJVMJD31T4G

Manufacturer No:
NJVMJD31T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJD31T4G is a complementary power transistor produced by onsemi, specifically designed for general-purpose amplifier and low-speed switching applications. This NPN transistor is part of the MJD31 series and is electrically similar to the popular TIP31 series. It is packaged in a DPAK (TO-252) case, which is lead-formed for surface mount applications and is Pb-free and RoHS compliant. The NJV prefix indicates that this device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Max Unit
Collector-Emitter Voltage VCEO 40 Vdc (MJD31), 100 Vdc (MJD31C)
Collector-Base Voltage VCB 40 Vdc (MJD31), 100 Vdc (MJD31C)
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 3.0 Adc
Collector Current - Peak ICM 5.0 Adc
Base Current IB 1.0 Adc
Total Power Dissipation @ TC = 25°C PD 15 W (Derate above 25°C: 0.12 W/°C)
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C
Thermal Resistance, Junction-to-Case RJC 8.3 °C/W
Thermal Resistance, Junction-to-Ambient RJA 80 °C/W
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Lead-formed for surface mount applications in plastic sleeves.
  • Straight lead version in plastic sleeves (“1” suffix) and lead-formed version in 16 mm tape and reel (“T4” suffix).
  • Electrically similar to popular TIP31 and TIP32 series.
  • Epoxy meets UL 94, V−0 @ 0.125 in.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free and RoHS compliant.

Applications

The NJVMJD31T4G is suitable for a variety of applications, including:

  • General-purpose amplifiers.
  • Low-speed switching applications.
  • Automotive systems due to its AEC-Q101 qualification.
  • Other applications requiring high reliability and specific control change requirements.

Q & A

  1. What is the maximum collector-emitter voltage for the NJVMJD31T4G?

    The maximum collector-emitter voltage for the NJVMJD31T4G is 40 Vdc for the MJD31 and 100 Vdc for the MJD31C.

  2. What is the continuous collector current rating?

    The continuous collector current rating is 3.0 Adc.

  3. Is the NJVMJD31T4G Pb-free and RoHS compliant?
  4. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case is 8.3 °C/W.

  5. What are the operating and storage junction temperature ranges?

    The operating and storage junction temperature ranges are −65 to +150 °C.

  6. Is the NJVMJD31T4G suitable for automotive applications?
  7. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  8. What are the key features of the DPAK package?

    The DPAK package is lead-formed for surface mount applications and available in straight lead and tape and reel versions.

  9. What are the typical applications for the NJVMJD31T4G?

    The typical applications include general-purpose amplifiers, low-speed switching, and automotive systems.

  10. Does the epoxy meet any specific standards?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD31T4G NJVMJD32T4G NJVMJD31CT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 10 @ 3A, 4V 25 @ 1A, 4V
Power - Max 1.56 W 1.56 W 1.56 W
Frequency - Transition 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK

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