Overview
The NJVMJD31CT4G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for general-purpose amplifier and low-speed switching applications. It is part of the MJD31 series, which is electrically similar to the popular TIP31 series. The NJVMJD31CT4G is packaged in a DPAK (TO-252-3) surface mount configuration, making it suitable for a wide range of electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | Vdc |
| Collector-Base Voltage (VCBO) | 100 | Vdc |
| Emitter-Base Voltage (VEBO) | 5.0 | Vdc |
| Continuous Collector Current (IC) | 3.0 | A |
| Peak Collector Current (ICM) | 5.0 | A |
| Base Current (IB) | 1.0 | A |
| Total Power Dissipation at TC = 25°C | 15 | W |
| Transition Frequency (fT) | 3 | MHz |
| DC Current Gain (hFE) | 10 - 50 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.2 | Vdc |
| Base-Emitter On Voltage (VBE(on)) | 1.8 | Vdc |
| Operating and Storage Junction Temperature Range | -65 to +150 | °C |
Key Features
- Lead formed for surface mount applications in plastic sleeves or straight lead version.
- Electrically similar to popular TIP31 and TIP32 series.
- Epoxy meets UL 94, V-0 @ 0.125 in.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-free and RoHS compliant.
- Compact DPAK (TO-252-3) package for efficient thermal management.
- High DC current gain and low collector-emitter saturation voltage.
Applications
The NJVMJD31CT4G is suitable for a variety of applications, including:
- General-purpose amplifiers.
- Low-speed switching applications.
- Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
- Power management and control circuits.
- Industrial and commercial electronic devices where high current and voltage handling are necessary.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the NJVMJD31CT4G?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current (IC) rating of this transistor?
The continuous collector current (IC) rating is 3.0 A.
- What is the transition frequency (fT) of the NJVMJD31CT4G?
The transition frequency (fT) is 3 MHz.
- Is the NJVMJD31CT4G RoHS compliant?
- What is the operating junction temperature range for this transistor?
The operating and storage junction temperature range is -65 to +150 °C.
- What package type is the NJVMJD31CT4G available in?
The NJVMJD31CT4G is available in a DPAK (TO-252-3) surface mount package.
- Is the NJVMJD31CT4G suitable for automotive applications?
- What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?
The collector-emitter saturation voltage (VCE(sat)) is 1.2 Vdc.
- What is the base-emitter on voltage (VBE(on)) of the NJVMJD31CT4G?
The base-emitter on voltage (VBE(on)) is 1.8 Vdc.
- What is the DC current gain (hFE) range of this transistor?
The DC current gain (hFE) range is 10 to 50.
