Overview
The MMBT5550LT1G is a high-voltage NPN silicon transistor produced by onsemi. This device is part of the MMBT5550L and MMBT5551L series, which are designed for high-voltage applications. The MMBT5550LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 140 | Vdc |
| Collector-Base Voltage | VCBO | 160 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 1.0 mA, VCE = 5.0 Vdc) | hFE | 60 - 80 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VCE(sat) | 0.15 - 0.25 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VBE(sat) | 1.0 - 1.2 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- High collector-emitter and collector-base voltage ratings (VCEO = 140 Vdc, VCBO = 160 Vdc).
- Continuous collector current of 600 mA.
- Wide junction and storage temperature range (-55°C to +150°C).
- High DC current gain (hFE = 60 - 80 at IC = 1.0 mA, VCE = 5.0 Vdc).
- Low collector-emitter and base-emitter saturation voltages.
Applications
- Automotive systems requiring high reliability and compliance with automotive standards.
- High-voltage switching and amplification applications.
- General-purpose amplifiers and switches in industrial and consumer electronics.
- Power management and control circuits.
- Audio and signal processing circuits where high voltage handling is necessary.
Q & A
- What is the maximum collector-emitter voltage for the MMBT5550LT1G?
The maximum collector-emitter voltage (VCEO) for the MMBT5550LT1G is 140 Vdc.
- Is the MMBT5550LT1G RoHS compliant?
- What is the continuous collector current rating of the MMBT5550LT1G?
The continuous collector current (IC) rating is 600 mA.
- What are the junction and storage temperature ranges for the MMBT5550LT1G?
The junction and storage temperature range is -55°C to +150°C.
- What is the typical DC current gain (hFE) of the MMBT5550LT1G?
The typical DC current gain (hFE) is 60 - 80 at IC = 1.0 mA and VCE = 5.0 Vdc.
- What are some common applications for the MMBT5550LT1G?
Common applications include automotive systems, high-voltage switching and amplification, general-purpose amplifiers, power management, and audio signal processing.
- Is the MMBT5550LT1G suitable for automotive applications?
- What is the thermal resistance (RθJA) of the MMBT5550LT1G?
The thermal resistance (RθJA) is 417 °C/W.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT5550LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.15 - 0.25 Vdc at IC = 10 mA and IB = 1.0 mA.
- What is the base-emitter saturation voltage (VBE(sat)) of the MMBT5550LT1G?
The base-emitter saturation voltage (VBE(sat)) is 1.0 - 1.2 Vdc at IC = 10 mA and IB = 1.0 mA.
