MMBT5551LT3G
  • Share:

onsemi MMBT5551LT3G

Manufacturer No:
MMBT5551LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 160V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT5551LT3G is a high-voltage NPN general-purpose amplifier transistor produced by onsemi. This device is designed for applications requiring high voltage and current handling capabilities, such as in general-purpose amplifiers and gas discharge display drivers. It is part of the MMBT5551 series, which is known for its robust performance and reliability.

The MMBT5551LT3G is packaged in a SOT-23 (TO-236) case, making it suitable for a wide range of applications where space is limited. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 160 Vdc
Collector-Base Voltage VCBO 180 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 600 mAdc
Operating and Storage Temperature TJ, TSTG -55 to +150 °C
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction to Ambient (FR-5 Board) RθJA 556 °C/W
DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) hFE 60 - 80
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VCE(sat) 0.15 - 0.25 Vdc
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VBE(sat) 1.0 - 1.2 Vdc

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • High collector-emitter voltage (VCEO) of 160 V and collector-base voltage (VCBO) of 180 V, making it ideal for high-voltage applications.
  • Continuous collector current (IC) of 600 mA, suitable for a variety of power and signal amplification tasks.
  • Wide operating and storage temperature range of -55°C to +150°C.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)), ensuring efficient operation.

Applications

  • General-purpose amplifiers: Suitable for a wide range of amplification tasks due to its high voltage and current handling capabilities.
  • Gas discharge display drivers: Ideal for driving gas discharge displays such as those used in signage and display panels.
  • Automotive applications: AEC-Q101 qualified, making it suitable for use in automotive systems where reliability and durability are critical.
  • Industrial control systems: Can be used in various industrial control applications requiring high voltage and current handling.
  • Consumer electronics: Suitable for use in consumer electronics where high reliability and performance are required.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the MMBT5551LT3G?

    The collector-emitter voltage (VCEO) of the MMBT5551LT3G is 160 Vdc.

  2. Is the MMBT5551LT3G RoHS compliant?
  3. What is the continuous collector current (IC) of the MMBT5551LT3G?

    The continuous collector current (IC) of the MMBT5551LT3G is 600 mAdc.

  4. What is the operating and storage temperature range of the MMBT5551LT3G?

    The operating and storage temperature range of the MMBT5551LT3G is -55°C to +150°C.

  5. Is the MMBT5551LT3G suitable for automotive applications?
  6. What is the thermal resistance, junction to ambient (RθJA), of the MMBT5551LT3G on an FR-5 board?

    The thermal resistance, junction to ambient (RθJA), of the MMBT5551LT3G on an FR-5 board is 556 °C/W.

  7. What is the typical DC current gain (hFE) of the MMBT5551LT3G?

    The typical DC current gain (hFE) of the MMBT5551LT3G is between 60 and 80 at IC = 1.0 mA and VCE = 5.0 V.

  8. What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT5551LT3G?

    The collector-emitter saturation voltage (VCE(sat)) of the MMBT5551LT3G is between 0.15 and 0.25 Vdc at IC = 10 mA and IB = 1.0 mA.

  9. What is the base-emitter saturation voltage (VBE(sat)) of the MMBT5551LT3G?

    The base-emitter saturation voltage (VBE(sat)) of the MMBT5551LT3G is between 1.0 and 1.2 Vdc at IC = 10 mA and IB = 1.0 mA.

  10. In what package is the MMBT5551LT3G available?

    The MMBT5551LT3G is available in a SOT-23 (TO-236) package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:225 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.21
1,929

Please send RFQ , we will respond immediately.

Same Series
SMMBT5551LT1G
SMMBT5551LT1G
TRANS NPN 160V 0.6A SOT23-3
SMMBT5551LT3G
SMMBT5551LT3G
TRANS NPN 160V 0.6A SOT23-3
MMBT5550LT3G
MMBT5550LT3G
TRANS NPN 140V 0.6A SOT23-3
MMBT5551LT3G
MMBT5551LT3G
TRANS NPN 160V 0.6A SOT23-3
MMBT5550LT1G
MMBT5550LT1G
TRANS NPN 140V 0.6A SOT23-3
MMBT5550LT1
MMBT5550LT1
TRANS SS NPN 140V HV SOT23

Similar Products

Part Number MMBT5551LT3G MMBT5550LT3G MMBT5551LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 140 V 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 250mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 60 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 225 mW 225 mW 225 mW
Frequency - Transition - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD