Overview
The SMMBT5551LT1G is a high-voltage NPN silicon transistor produced by onsemi. This device is part of the MMBT5551L series and is packaged in a SOT-23 (TO-236) case. It is designed for high-voltage applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The transistor is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 160 | Vdc |
| Collector-Base Voltage | VCBO | 180 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) | hFE | 60 - 80 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VCE(sat) | 0.15 - 0.25 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VBE(sat) | 1.0 - 1.2 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
- High voltage ratings: VCEO = 160 V, VCBO = 180 V, and VEBO = 6.0 V.
- Continuous collector current of 600 mA.
- High DC current gain (hFE) ranging from 60 to 80 at IC = 1.0 mA and VCE = 5.0 V.
- Low collector-emitter and base-emitter saturation voltages.
- Wide operating temperature range from -55°C to +150°C.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust specifications.
- High-voltage switching and amplification: Ideal for applications requiring high voltage handling and current gain.
- Industrial control systems: Used in industrial control circuits where reliability and high performance are critical.
- Consumer electronics: Can be used in consumer electronics that require high voltage and current handling capabilities.
Q & A
- What is the collector-emitter voltage rating of the SMMBT5551LT1G?
The collector-emitter voltage rating (VCEO) is 160 Vdc.
- Is the SMMBT5551LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the continuous collector current of the SMMBT5551LT1G?
The continuous collector current (IC) is 600 mA.
- What are the thermal resistance and junction temperature ranges of the SMMBT5551LT1G?
The thermal resistance (RθJA) is 417 °C/W, and the junction and storage temperature range is -55°C to +150°C.
- Is the SMMBT5551LT1G environmentally friendly?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What is the DC current gain of the SMMBT5551LT1G?
The DC current gain (hFE) ranges from 60 to 80 at IC = 1.0 mA and VCE = 5.0 V.
- What are the typical collector-emitter and base-emitter saturation voltages?
The collector-emitter saturation voltage (VCE(sat)) is 0.15 - 0.25 V, and the base-emitter saturation voltage (VBE(sat)) is 1.0 - 1.2 V.
- What is the package type of the SMMBT5551LT1G?
The device is packaged in a SOT-23 (TO-236) case.
- Can the SMMBT5551LT1G be used in high-voltage switching applications?
Yes, it is suitable for high-voltage switching and amplification due to its high voltage ratings and current gain.
- What are some common applications of the SMMBT5551LT1G?
Common applications include automotive systems, high-voltage switching and amplification, industrial control systems, and consumer electronics.
