SMMBT5551LT1G
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onsemi SMMBT5551LT1G

Manufacturer No:
SMMBT5551LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 160V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMBT5551LT1G is a high-voltage NPN silicon transistor produced by onsemi. This device is part of the MMBT5551L series and is packaged in a SOT-23 (TO-236) case. It is designed for high-voltage applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The transistor is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 160 Vdc
Collector-Base Voltage VCBO 180 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 600 mAdc
Thermal Resistance, Junction-to-Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) hFE 60 - 80
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VCE(sat) 0.15 - 0.25 Vdc
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VBE(sat) 1.0 - 1.2 Vdc

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • High voltage ratings: VCEO = 160 V, VCBO = 180 V, and VEBO = 6.0 V.
  • Continuous collector current of 600 mA.
  • High DC current gain (hFE) ranging from 60 to 80 at IC = 1.0 mA and VCE = 5.0 V.
  • Low collector-emitter and base-emitter saturation voltages.
  • Wide operating temperature range from -55°C to +150°C.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust specifications.
  • High-voltage switching and amplification: Ideal for applications requiring high voltage handling and current gain.
  • Industrial control systems: Used in industrial control circuits where reliability and high performance are critical.
  • Consumer electronics: Can be used in consumer electronics that require high voltage and current handling capabilities.

Q & A

  1. What is the collector-emitter voltage rating of the SMMBT5551LT1G?

    The collector-emitter voltage rating (VCEO) is 160 Vdc.

  2. Is the SMMBT5551LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  3. What is the continuous collector current of the SMMBT5551LT1G?

    The continuous collector current (IC) is 600 mA.

  4. What are the thermal resistance and junction temperature ranges of the SMMBT5551LT1G?

    The thermal resistance (RθJA) is 417 °C/W, and the junction and storage temperature range is -55°C to +150°C.

  5. Is the SMMBT5551LT1G environmentally friendly?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  6. What is the DC current gain of the SMMBT5551LT1G?

    The DC current gain (hFE) ranges from 60 to 80 at IC = 1.0 mA and VCE = 5.0 V.

  7. What are the typical collector-emitter and base-emitter saturation voltages?

    The collector-emitter saturation voltage (VCE(sat)) is 0.15 - 0.25 V, and the base-emitter saturation voltage (VBE(sat)) is 1.0 - 1.2 V.

  8. What is the package type of the SMMBT5551LT1G?

    The device is packaged in a SOT-23 (TO-236) case.

  9. Can the SMMBT5551LT1G be used in high-voltage switching applications?

    Yes, it is suitable for high-voltage switching and amplification due to its high voltage ratings and current gain.

  10. What are some common applications of the SMMBT5551LT1G?

    Common applications include automotive systems, high-voltage switching and amplification, industrial control systems, and consumer electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:225 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number SMMBT5551LT1G SMMBT5551LT3G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 225 mW 225 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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