BC847CWH6778XTSA1
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Infineon Technologies BC847CWH6778XTSA1

Manufacturer No:
BC847CWH6778XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CWH6778XTSA1 is an NPN general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for a wide range of applications, including audio frequency (AF) input stages and driver applications. It is packaged in a small SOT323 (SC-70) surface-mount device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 45 V
Current - Collector (Ic) (Max) 100 mA
Power Dissipation (Ptot) 250 mW
Operating Temperature (TJ) 150 °C
Frequency - Transition (ft) 250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Package SOT323 (SC-70)

Key Features

  • High Current Gain: The BC847CWH6778XTSA1 offers a high current gain, making it suitable for amplification and switching applications.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in switching applications.
  • Low Noise: The transistor has low noise characteristics between 30 Hz and 15 kHz, which is beneficial for audio frequency applications.
  • Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS-compliant SOT323 package, ensuring environmental compliance.
  • AEC Q101 Qualified: The transistor is qualified according to the AEC Q101 standard, indicating its suitability for automotive applications.
  • Complementary Types: Available with complementary PNP types (BC857-BC860), which can be used in push-pull configurations.

Applications

  • Audio Frequency (AF) Input Stages: Suitable for use in AF input stages due to its low noise characteristics.
  • Driver Applications: Can be used as a driver transistor in various electronic circuits.
  • General-Purpose Switching and Amplification: Applicable in general-purpose switching and amplification circuits.
  • Automotive and Industrial Applications: Qualified for use in automotive and industrial environments due to its AEC Q101 qualification.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BC847CWH6778XTSA1?

    The maximum collector-emitter breakdown voltage is 45 V.

  2. What is the maximum collector current (Ic) of the BC847CWH6778XTSA1?

    The maximum collector current is 100 mA.

  3. What is the operating temperature range of the BC847CWH6778XTSA1?

    The operating temperature range is up to 150°C (TJ).

  4. What is the transition frequency (ft) of the BC847CWH6778XTSA1?

    The transition frequency is 250 MHz.

  5. Is the BC847CWH6778XTSA1 RoHS compliant?

    Yes, the transistor is packaged in a Pb-free (RoHS compliant) SOT323 package.

  6. What are the complementary PNP types for the BC847CWH6778XTSA1?

    The complementary PNP types are BC857-BC860.

  7. What is the typical application of the BC847CWH6778XTSA1?

    It is typically used in AF input stages and driver applications.

  8. What is the package type of the BC847CWH6778XTSA1?

    The package type is SOT323 (SC-70).

  9. Is the BC847CWH6778XTSA1 qualified for automotive use?

    Yes, it is qualified according to the AEC Q101 standard.

  10. What is the minimum DC current gain (hFE) of the BC847CWH6778XTSA1?

    The minimum DC current gain (hFE) is 420 at 2mA and 5V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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