BC850CWH6327XTSA1
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Infineon Technologies BC850CWH6327XTSA1

Manufacturer No:
BC850CWH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850C is an NPN bipolar junction transistor (BJT) housed in a small SOT23 Surface-Mounted Device (SMD) plastic package. It is designed for general-purpose switching and amplification applications. This transistor is part of a broader family of bipolar transistors that are widely used in various electronic designs.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO45V
Collector-Base VoltageVCBO50V
Emitter-Base VoltageVEBO6V
Collector CurrentIC100mA
Peak Collector Current (tp ≤ 10 ms)ICM200mA
Total Power Dissipation (TS ≤ 71 °C)Ptot250mW
Junction TemperatureTj150°C
Transition Frequency (fT) at IC = 10 mA, VCE = 5 VfT100MHz
Current Gain (hFE) at IC = 2 mA, VCE = 5 VhFE420 - 800

Key Features

General Purpose: Suitable for general-purpose switching and amplification applications.
Low Current and Voltage: Maximum collector current of 100 mA and maximum collector-emitter voltage of 45 V.
High Current Gain: The transistor has a high current gain (hFE) ranging from 420 to 800.
Low Noise: Low noise characteristics between 30 Hz and 15 kHz.
Pb-free and RoHS Compliant: The package is lead-free and compliant with RoHS regulations.
Small Package: Housed in a compact SOT23 SMD package, making it suitable for space-constrained designs.

Applications

Automotive and Industrial: Used in various automotive and industrial applications due to its reliability and performance.
Consumer Electronics: Suitable for use in consumer electronics such as audio equipment, power supplies, and other general-purpose electronic circuits.
Mobile and Wearables: Can be used in mobile and wearable devices where small size and low power consumption are critical.

Q & A

  1. What is the maximum collector-emitter voltage of the BC850C transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum collector current of the BC850C transistor?

    The maximum collector current (IC) is 100 mA.

  3. What is the transition frequency (fT) of the BC850C transistor?

    The transition frequency (fT) at IC = 10 mA, VCE = 5 V is 100 MHz.

  4. Is the BC850C transistor RoHS compliant?

    Yes, the BC850C transistor is Pb-free and RoHS compliant.

  5. What is the package type of the BC850C transistor?

    The BC850C transistor is housed in a SOT23 Surface-Mounted Device (SMD) plastic package.

  6. What are the typical applications of the BC850C transistor?

    The BC850C transistor is used in general-purpose switching and amplification applications, including automotive, industrial, consumer electronics, and mobile devices.

  7. What is the current gain (hFE) range of the BC850C transistor?

    The current gain (hFE) of the BC850C transistor ranges from 420 to 800.

  8. What is the maximum junction temperature of the BC850C transistor?

    The maximum junction temperature (Tj) is 150 °C.

  9. Is the BC850C transistor suitable for high-frequency applications?

    While it has a transition frequency of 100 MHz, it is generally not used for very high-frequency applications but is suitable for many general-purpose and low-frequency applications.

  10. What is the PNP complement of the BC850C transistor?

    The PNP complement of the BC850C transistor is the BC860C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC850CWH6327XTSA1 BC850BWH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

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