BC847BWH6433XTMA1
  • Share:

Infineon Technologies BC847BWH6433XTMA1

Manufacturer No:
BC847BWH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BWH6433XTMA1 is an NPN silicon general-purpose transistor produced by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

Key Specifications

Parameter Value Unit
Package SOT323 (SC-70) -
Channel Type NPN -
Maximum Collector-Emitter Voltage (VCEO) 45 V
Maximum Collector Current (IC) 100 mA
Minimum DC Current Gain (hFE) 200 -
Maximum DC Current Gain (hFE) 450 -
Maximum Junction Temperature (TJ) 150 °C
Power Dissipation (Ptot) 200 mW
Thermal Resistance, Junction to Ambient (RθJA) 625 °C/W
ESD Ratings (Human Body Model) 4,000 V

Key Features

  • High Current Gain: The BC847BWH6433XTMA1 offers high current gain, making it suitable for applications requiring high amplification.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power consumption and improves efficiency in switching and amplifier applications.
  • Low Noise: The transistor exhibits low noise between 30 Hz and 15 kHz, which is beneficial for audio frequency (AF) applications.
  • Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS-compliant SOT323 package, ensuring environmental compliance.
  • Complementary Types: The BC847BWH6433XTMA1 has complementary PNP types (BC857...-BC860), allowing for balanced circuit designs.
  • AEC Q101 Qualified: The transistor is qualified according to AEC Q101, ensuring reliability and performance in automotive and industrial applications.

Applications

  • AF Input Stages and Driver Applications: The transistor is well-suited for audio frequency input stages and driver applications due to its low noise and high current gain.
  • Switching Applications: Its low collector-emitter saturation voltage makes it ideal for switching applications where low power consumption is crucial.
  • Automotive and Industrial Applications: Qualified according to AEC Q101, this transistor is reliable for use in automotive and industrial environments.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847BWH6433XTMA1?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the package type of the BC847BWH6433XTMA1?

    The transistor is packaged in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

  3. What are the complementary PNP types for the BC847BWH6433XTMA1?

    The complementary PNP types are BC857...-BC860.

  4. Is the BC847BWH6433XTMA1 RoHS compliant?

    Yes, the transistor is packaged in a Pb-free, RoHS-compliant package.

  5. What is the maximum junction temperature of the BC847BWH6433XTMA1?

    The maximum junction temperature (TJ) is 150°C.

  6. What are the typical applications of the BC847BWH6433XTMA1?

    The transistor is typically used in AF input stages, driver applications, switching applications, and in automotive and industrial environments.

  7. What is the power dissipation of the BC847BWH6433XTMA1?

    The power dissipation (Ptot) is 200 mW.

  8. Is the BC847BWH6433XTMA1 qualified according to AEC Q101?

    Yes, the transistor is qualified according to AEC Q101, except for the BC847BL3 variant.

  9. What is the thermal resistance, junction to ambient, of the BC847BWH6433XTMA1?

    The thermal resistance, junction to ambient (RθJA), is 625 °C/W.

  10. What is the ESD rating of the BC847BWH6433XTMA1 according to the Human Body Model?

    The ESD rating according to the Human Body Model is 4,000 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

$0.04
12,663

Please send RFQ , we will respond immediately.

Same Series
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
BC848 - GENERAL PURPOSE TRANSIST
BC847AE6327HTSA1
BC847AE6327HTSA1
TRANS NPN 45V 0.1A SOT23
BC848BE6327HTSA1
BC848BE6327HTSA1
TRANS NPN 30V 0.1A SOT-23
BC849CE6327HTSA1
BC849CE6327HTSA1
TRANS NPN 30V 0.1A SOT-23
BC847BWH6327XTSA1
BC847BWH6327XTSA1
TRANS NPN 45V 0.1A SOT323
BC849CWH6327XTSA1
BC849CWH6327XTSA1
TRANS NPN 30V 0.1A SOT323
BC847BWE6327BTSA1
BC847BWE6327BTSA1
TRANS NPN 45V 0.1A SOT-323
BC847CWE6327BTSA1
BC847CWE6327BTSA1
TRANS NPN 45V 0.1A SOT323
BC847CWE6433HTMA1
BC847CWE6433HTMA1
TRANS NPN 45V 0.1A SOT323
BC850CWE6327HTSA1
BC850CWE6327HTSA1
TRANS NPN 45V 0.1A SOT-323
BC 847B B5003
BC 847B B5003
TRANS NPN 45V 0.1A SOT23
BC 846BW H6327
BC 846BW H6327
TRANS NPN 65V 0.1A SOT323

Similar Products

Part Number BC847BWH6433XTMA1 BC847CWH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

Related Product By Categories

BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAS70-04B5000
BAS70-04B5000
Infineon Technologies
SCHOTTKY DIODE
BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV 70 B5003
BAV 70 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC807-16
BC807-16
Infineon Technologies
TRANS PNP 45V 0.8A SOT23-3
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
BTS452RATMA1
BTS452RATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CYUSB3014-BZXI
CYUSB3014-BZXI
Infineon Technologies
IC ARM9 USB CONTROLLER 121FBGA