BC847BWH6433XTMA1
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Infineon Technologies BC847BWH6433XTMA1

Manufacturer No:
BC847BWH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BWH6433XTMA1 is an NPN silicon general-purpose transistor produced by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

Key Specifications

Parameter Value Unit
Package SOT323 (SC-70) -
Channel Type NPN -
Maximum Collector-Emitter Voltage (VCEO) 45 V
Maximum Collector Current (IC) 100 mA
Minimum DC Current Gain (hFE) 200 -
Maximum DC Current Gain (hFE) 450 -
Maximum Junction Temperature (TJ) 150 °C
Power Dissipation (Ptot) 200 mW
Thermal Resistance, Junction to Ambient (RθJA) 625 °C/W
ESD Ratings (Human Body Model) 4,000 V

Key Features

  • High Current Gain: The BC847BWH6433XTMA1 offers high current gain, making it suitable for applications requiring high amplification.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power consumption and improves efficiency in switching and amplifier applications.
  • Low Noise: The transistor exhibits low noise between 30 Hz and 15 kHz, which is beneficial for audio frequency (AF) applications.
  • Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS-compliant SOT323 package, ensuring environmental compliance.
  • Complementary Types: The BC847BWH6433XTMA1 has complementary PNP types (BC857...-BC860), allowing for balanced circuit designs.
  • AEC Q101 Qualified: The transistor is qualified according to AEC Q101, ensuring reliability and performance in automotive and industrial applications.

Applications

  • AF Input Stages and Driver Applications: The transistor is well-suited for audio frequency input stages and driver applications due to its low noise and high current gain.
  • Switching Applications: Its low collector-emitter saturation voltage makes it ideal for switching applications where low power consumption is crucial.
  • Automotive and Industrial Applications: Qualified according to AEC Q101, this transistor is reliable for use in automotive and industrial environments.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847BWH6433XTMA1?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the package type of the BC847BWH6433XTMA1?

    The transistor is packaged in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

  3. What are the complementary PNP types for the BC847BWH6433XTMA1?

    The complementary PNP types are BC857...-BC860.

  4. Is the BC847BWH6433XTMA1 RoHS compliant?

    Yes, the transistor is packaged in a Pb-free, RoHS-compliant package.

  5. What is the maximum junction temperature of the BC847BWH6433XTMA1?

    The maximum junction temperature (TJ) is 150°C.

  6. What are the typical applications of the BC847BWH6433XTMA1?

    The transistor is typically used in AF input stages, driver applications, switching applications, and in automotive and industrial environments.

  7. What is the power dissipation of the BC847BWH6433XTMA1?

    The power dissipation (Ptot) is 200 mW.

  8. Is the BC847BWH6433XTMA1 qualified according to AEC Q101?

    Yes, the transistor is qualified according to AEC Q101, except for the BC847BL3 variant.

  9. What is the thermal resistance, junction to ambient, of the BC847BWH6433XTMA1?

    The thermal resistance, junction to ambient (RθJA), is 625 °C/W.

  10. What is the ESD rating of the BC847BWH6433XTMA1 according to the Human Body Model?

    The ESD rating according to the Human Body Model is 4,000 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC847BWH6433XTMA1 BC847CWH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

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