BC847BWH6433XTMA1
  • Share:

Infineon Technologies BC847BWH6433XTMA1

Manufacturer No:
BC847BWH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BWH6433XTMA1 is an NPN silicon general-purpose transistor produced by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

Key Specifications

Parameter Value Unit
Package SOT323 (SC-70) -
Channel Type NPN -
Maximum Collector-Emitter Voltage (VCEO) 45 V
Maximum Collector Current (IC) 100 mA
Minimum DC Current Gain (hFE) 200 -
Maximum DC Current Gain (hFE) 450 -
Maximum Junction Temperature (TJ) 150 °C
Power Dissipation (Ptot) 200 mW
Thermal Resistance, Junction to Ambient (RθJA) 625 °C/W
ESD Ratings (Human Body Model) 4,000 V

Key Features

  • High Current Gain: The BC847BWH6433XTMA1 offers high current gain, making it suitable for applications requiring high amplification.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power consumption and improves efficiency in switching and amplifier applications.
  • Low Noise: The transistor exhibits low noise between 30 Hz and 15 kHz, which is beneficial for audio frequency (AF) applications.
  • Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS-compliant SOT323 package, ensuring environmental compliance.
  • Complementary Types: The BC847BWH6433XTMA1 has complementary PNP types (BC857...-BC860), allowing for balanced circuit designs.
  • AEC Q101 Qualified: The transistor is qualified according to AEC Q101, ensuring reliability and performance in automotive and industrial applications.

Applications

  • AF Input Stages and Driver Applications: The transistor is well-suited for audio frequency input stages and driver applications due to its low noise and high current gain.
  • Switching Applications: Its low collector-emitter saturation voltage makes it ideal for switching applications where low power consumption is crucial.
  • Automotive and Industrial Applications: Qualified according to AEC Q101, this transistor is reliable for use in automotive and industrial environments.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847BWH6433XTMA1?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the package type of the BC847BWH6433XTMA1?

    The transistor is packaged in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

  3. What are the complementary PNP types for the BC847BWH6433XTMA1?

    The complementary PNP types are BC857...-BC860.

  4. Is the BC847BWH6433XTMA1 RoHS compliant?

    Yes, the transistor is packaged in a Pb-free, RoHS-compliant package.

  5. What is the maximum junction temperature of the BC847BWH6433XTMA1?

    The maximum junction temperature (TJ) is 150°C.

  6. What are the typical applications of the BC847BWH6433XTMA1?

    The transistor is typically used in AF input stages, driver applications, switching applications, and in automotive and industrial environments.

  7. What is the power dissipation of the BC847BWH6433XTMA1?

    The power dissipation (Ptot) is 200 mW.

  8. Is the BC847BWH6433XTMA1 qualified according to AEC Q101?

    Yes, the transistor is qualified according to AEC Q101, except for the BC847BL3 variant.

  9. What is the thermal resistance, junction to ambient, of the BC847BWH6433XTMA1?

    The thermal resistance, junction to ambient (RθJA), is 625 °C/W.

  10. What is the ESD rating of the BC847BWH6433XTMA1 according to the Human Body Model?

    The ESD rating according to the Human Body Model is 4,000 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

$0.04
12,663

Please send RFQ , we will respond immediately.

Same Series
BC847BE6327HTSA1
BC847BE6327HTSA1
TRANS NPN 45V 0.1A SOT23
BC848CE6433HTMA1
BC848CE6433HTMA1
TRANS NPN 30V 0.1A SOT23
BC847BWH6433XTMA1
BC847BWH6433XTMA1
TRANS NPN 45V 0.1A SOT323
BC847CWH6327XTSA1
BC847CWH6327XTSA1
TRANS NPN 45V 0.1A SOT323
BC848CWH6327XTSA1
BC848CWH6327XTSA1
TRANS NPN 30V 0.1A SOT323
BC849CWH6327XTSA1
BC849CWH6327XTSA1
TRANS NPN 30V 0.1A SOT323
BC850BE6327HTSA1
BC850BE6327HTSA1
TRANS NPN 45V 0.1A SOT-23
BC847CWH6778XTSA1
BC847CWH6778XTSA1
TRANS NPN 45V 0.1A SOT323
BC 847BT E6327
BC 847BT E6327
TRANS NPN 45V 0.1A SC75
BC 848C B6327
BC 848C B6327
TRANS NPN 30V 0.1A SOT23
BC 847C B5003
BC 847C B5003
TRANS NPN 45V 0.1A SOT23
BC 846B E6327
BC 846B E6327
TRANS NPN 65V 0.1A SOT23

Similar Products

Part Number BC847BWH6433XTMA1 BC847CWH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
SAK-TC1796-256F150EBE
SAK-TC1796-256F150EBE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416PBGA
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
S29GL128P90TFIR10
S29GL128P90TFIR10
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP