BC847BWH6433XTMA1
  • Share:

Infineon Technologies BC847BWH6433XTMA1

Manufacturer No:
BC847BWH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BWH6433XTMA1 is an NPN silicon general-purpose transistor produced by Infineon Technologies. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

Key Specifications

Parameter Value Unit
Package SOT323 (SC-70) -
Channel Type NPN -
Maximum Collector-Emitter Voltage (VCEO) 45 V
Maximum Collector Current (IC) 100 mA
Minimum DC Current Gain (hFE) 200 -
Maximum DC Current Gain (hFE) 450 -
Maximum Junction Temperature (TJ) 150 °C
Power Dissipation (Ptot) 200 mW
Thermal Resistance, Junction to Ambient (RθJA) 625 °C/W
ESD Ratings (Human Body Model) 4,000 V

Key Features

  • High Current Gain: The BC847BWH6433XTMA1 offers high current gain, making it suitable for applications requiring high amplification.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power consumption and improves efficiency in switching and amplifier applications.
  • Low Noise: The transistor exhibits low noise between 30 Hz and 15 kHz, which is beneficial for audio frequency (AF) applications.
  • Pb-free (RoHS Compliant) Package: The transistor is packaged in a lead-free, RoHS-compliant SOT323 package, ensuring environmental compliance.
  • Complementary Types: The BC847BWH6433XTMA1 has complementary PNP types (BC857...-BC860), allowing for balanced circuit designs.
  • AEC Q101 Qualified: The transistor is qualified according to AEC Q101, ensuring reliability and performance in automotive and industrial applications.

Applications

  • AF Input Stages and Driver Applications: The transistor is well-suited for audio frequency input stages and driver applications due to its low noise and high current gain.
  • Switching Applications: Its low collector-emitter saturation voltage makes it ideal for switching applications where low power consumption is crucial.
  • Automotive and Industrial Applications: Qualified according to AEC Q101, this transistor is reliable for use in automotive and industrial environments.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847BWH6433XTMA1?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the package type of the BC847BWH6433XTMA1?

    The transistor is packaged in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

  3. What are the complementary PNP types for the BC847BWH6433XTMA1?

    The complementary PNP types are BC857...-BC860.

  4. Is the BC847BWH6433XTMA1 RoHS compliant?

    Yes, the transistor is packaged in a Pb-free, RoHS-compliant package.

  5. What is the maximum junction temperature of the BC847BWH6433XTMA1?

    The maximum junction temperature (TJ) is 150°C.

  6. What are the typical applications of the BC847BWH6433XTMA1?

    The transistor is typically used in AF input stages, driver applications, switching applications, and in automotive and industrial environments.

  7. What is the power dissipation of the BC847BWH6433XTMA1?

    The power dissipation (Ptot) is 200 mW.

  8. Is the BC847BWH6433XTMA1 qualified according to AEC Q101?

    Yes, the transistor is qualified according to AEC Q101, except for the BC847BL3 variant.

  9. What is the thermal resistance, junction to ambient, of the BC847BWH6433XTMA1?

    The thermal resistance, junction to ambient (RθJA), is 625 °C/W.

  10. What is the ESD rating of the BC847BWH6433XTMA1 according to the Human Body Model?

    The ESD rating according to the Human Body Model is 4,000 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
0 Remaining View Similar

In Stock

$0.04
12,663

Please send RFQ , we will respond immediately.

Same Series
BC850CE6359HTMA1
BC850CE6359HTMA1
BC850 - LOW NOISE TRANSISTOR
BC848BE6327HTSA1
BC848BE6327HTSA1
TRANS NPN 30V 0.1A SOT-23
BC848BE6433HTMA1
BC848BE6433HTMA1
TRANS NPN 30V 0.1A SOT-23
BC848CE6433HTMA1
BC848CE6433HTMA1
TRANS NPN 30V 0.1A SOT23
BC847BWH6327XTSA1
BC847BWH6327XTSA1
TRANS NPN 45V 0.1A SOT323
BC849CWH6327XTSA1
BC849CWH6327XTSA1
TRANS NPN 30V 0.1A SOT323
BC 847BF E6327
BC 847BF E6327
TRANS NPN 45V 0.1A TSFP-3
BC847BWE6327BTSA1
BC847BWE6327BTSA1
TRANS NPN 45V 0.1A SOT-323
BC847CWE6433HTMA1
BC847CWE6433HTMA1
TRANS NPN 45V 0.1A SOT323
BC850BWE6327HTSA1
BC850BWE6327HTSA1
TRANS NPN 45V 0.1A SOT-323
BC 846B E6327
BC 846B E6327
TRANS NPN 65V 0.1A SOT23
BC 846BW H6327
BC 846BW H6327
TRANS NPN 65V 0.1A SOT323

Similar Products

Part Number BC847BWH6433XTMA1 BC847CWH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

Related Product By Categories

BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC846AWT1
BC846AWT1
onsemi
TRANS NPN 65V 0.1A SC70-3
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS4005WE6327BTSA1
BAS4005WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAS16B5000
BAS16B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC857CE6327HTSA1
BC857CE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
IRFR024NTRPBF
IRFR024NTRPBF
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
SAK-TC1796-256F150EBC
SAK-TC1796-256F150EBC
Infineon Technologies
32-BIT RISC FLASH MCU
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
BTS4140NHUMA1
BTS4140NHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
BTS4141NNT
BTS4141NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
FM24CL16B-GTR
FM24CL16B-GTR
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC