BC860BWE6327HTSA1
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Infineon Technologies BC860BWE6327HTSA1

Manufacturer No:
BC860BWE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT-323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Infineon Technologies BC860BWE6327HTSA1 is a PNP silicon AF (Audio Frequency) transistor. Although this component is currently obsolete and no longer manufactured, it was widely used in various electronic applications. The transistor is known for its high current gain and low collector-emitter saturation voltage, making it suitable for AF input stages and driver applications.

Key Specifications

ParameterValue
Transistor TypePNP
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter (Vceo) (Max)45 V
PackageSOT-323
Current Gain (hFE)High current gain
Collector-Emitter Saturation Voltage (Vce(sat))Low

Key Features

  • High current gain, making it suitable for amplification and switching applications.
  • Low collector-emitter saturation voltage, which reduces power consumption and heat generation.
  • PNP silicon AF transistor, ideal for AF input stages and driver applications.
  • SOT-323 package, which is compact and suitable for surface mount technology (SMT).

Applications

The BC860BWE6327HTSA1 transistor is designed for use in audio frequency applications, including AF input stages and driver circuits. It is also suitable for general-purpose amplification and switching in electronic devices. Other potential applications include audio equipment, communication devices, and small signal amplifiers.

Q & A

  1. What is the transistor type of the BC860BWE6327HTSA1?
    The BC860BWE6327HTSA1 is a PNP silicon AF transistor.
  2. What is the maximum collector current (Ic) of the BC860BWE6327HTSA1?
    The maximum collector current is 100 mA.
  3. What is the maximum collector-emitter voltage (Vceo) of the BC860BWE6327HTSA1?
    The maximum collector-emitter voltage is 45 V.
  4. What package type does the BC860BWE6327HTSA1 use?
    The BC860BWE6327HTSA1 uses the SOT-323 package.
  5. Why is the BC860BWE6327HTSA1 obsolete?
    The BC860BWE6327HTSA1 is obsolete and no longer manufactured by Infineon Technologies.
  6. What are some potential substitutes for the BC860BWE6327HTSA1?
    Potential substitutes include the BC860BWH6327XTSA1.
  7. What are the key features of the BC860BWE6327HTSA1?
    Key features include high current gain and low collector-emitter saturation voltage.
  8. In what types of applications is the BC860BWE6327HTSA1 typically used?
    It is typically used in AF input stages, driver applications, and general-purpose amplification and switching.
  9. What is the significance of the SOT-323 package?
    The SOT-323 package is compact and suitable for surface mount technology (SMT), making it ideal for modern electronic designs.
  10. How does the low collector-emitter saturation voltage benefit the transistor's performance?
    The low collector-emitter saturation voltage reduces power consumption and heat generation, improving overall efficiency and reliability.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC860BWE6327HTSA1 BC860CWE6327HTSA1 BC860BE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Not For New Designs
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323 PG-SOT323 PG-SOT23

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