BC858BE6433HTMA1
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Infineon Technologies BC858BE6433HTMA1

Manufacturer No:
BC858BE6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858BE6433HTMA1 is a high-performance Bipolar Junction Transistor (BJT) manufactured by Infineon Technologies. This PNP transistor is designed for a wide range of applications requiring high reliability and efficiency. It features a surface mount package in the PG-SOT23 format, making it suitable for compact and modern electronic designs.

Key Specifications

ParameterValue
TypeBipolar (BJT) Transistor PNP
Voltage (VCE)30 V
Current (IC)100 mA
Frequency (fT)250 MHz
Power Dissipation (PD)330 mW
PackageSurface Mount PG-SOT23

Key Features

  • High-frequency operation up to 250 MHz
  • Low power consumption with a maximum power dissipation of 330 mW
  • Compact surface mount PG-SOT23 package for space-efficient designs
  • High reliability and durability
  • Suitable for a wide range of applications including audio amplifiers, switching circuits, and general-purpose amplification

Applications

The BC858BE6433HTMA1 is versatile and can be used in various electronic applications, including:

  • Audio amplifiers and audio circuits
  • Switching circuits and power management systems
  • General-purpose amplification and signal processing
  • Automotive and industrial control systems
  • Consumer electronics and communication devices

Q & A

  1. What is the voltage rating of the BC858BE6433HTMA1 transistor?
    The voltage rating (VCE) of the BC858BE6433HTMA1 transistor is 30 V.
  2. What is the current rating of the BC858BE6433HTMA1 transistor?
    The current rating (IC) of the BC858BE6433HTMA1 transistor is 100 mA.
  3. What is the frequency rating of the BC858BE6433HTMA1 transistor?
    The frequency rating (fT) of the BC858BE6433HTMA1 transistor is 250 MHz.
  4. What is the power dissipation of the BC858BE6433HTMA1 transistor?
    The power dissipation (PD) of the BC858BE6433HTMA1 transistor is 330 mW.
  5. What package type does the BC858BE6433HTMA1 transistor use?
    The BC858BE6433HTMA1 transistor uses a surface mount PG-SOT23 package.
  6. Who is the manufacturer of the BC858BE6433HTMA1 transistor?
    The BC858BE6433HTMA1 transistor is manufactured by Infineon Technologies.
  7. What are some common applications of the BC858BE6433HTMA1 transistor?
    The BC858BE6433HTMA1 transistor is commonly used in audio amplifiers, switching circuits, general-purpose amplification, automotive systems, and consumer electronics.
  8. Why is the BC858BE6433HTMA1 transistor preferred in high-frequency applications?
    The BC858BE6433HTMA1 transistor is preferred in high-frequency applications due to its high-frequency operation up to 250 MHz.
  9. Is the BC858BE6433HTMA1 transistor suitable for space-constrained designs?
    Yes, the BC858BE6433HTMA1 transistor is suitable for space-constrained designs due to its compact surface mount PG-SOT23 package.
  10. Where can I find detailed specifications for the BC858BE6433HTMA1 transistor?
    Detailed specifications for the BC858BE6433HTMA1 transistor can be found in the product datasheet available from sources like Digi-Key, Infineon Technologies' official website, and other electronic component suppliers.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC858BE6433HTMA1 BC858CE6433HTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 330 mW 330 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

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