Overview
The BC860BE6327HTSA1 is a highly versatile and reliable PNP silicon AF (Audio Frequency) transistor produced by Infineon Technologies. This transistor is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. It is packaged in a surface mount PG-SOT23 format, making it suitable for a variety of modern electronic designs.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | PNP Bipolar Junction Transistor (BJT) |
Maximum Collector Current | 100 mA |
Maximum Collector-Emitter Voltage | 45 V |
Maximum Collector-Base Voltage | 50 V |
Maximum Emitter-Base Voltage | 5 V |
Transition Frequency | 250 MHz |
Power Dissipation | 330 mW |
Package Type | Surface Mount PG-SOT23 |
Key Features
- High current gain, making it suitable for amplification and switching applications.
- Low collector-emitter saturation voltage, which reduces power consumption and improves efficiency.
- High transition frequency of 250 MHz, enabling its use in high-frequency applications.
- Compact PG-SOT23 surface mount package, ideal for space-constrained designs.
Applications
The BC860BE6327HTSA1 is versatile and can be used in various applications, including:
- AF input stages: Suitable for audio frequency amplification due to its high current gain and low noise characteristics.
- Driver applications: Can be used to drive other components or circuits due to its high current handling capability.
- General-purpose amplification: Useful in a wide range of amplification tasks where high gain and low saturation voltage are required.
Q & A
- What is the maximum collector current of the BC860BE6327HTSA1?
The maximum collector current is 100 mA. - What is the package type of the BC860BE6327HTSA1?
The package type is surface mount PG-SOT23. - What is the transition frequency of the BC860BE6327HTSA1?
The transition frequency is 250 MHz. - What are the typical applications of the BC860BE6327HTSA1?
Typical applications include AF input stages, driver applications, and general-purpose amplification. - What is the maximum collector-emitter voltage of the BC860BE6327HTSA1?
The maximum collector-emitter voltage is 45 V. - What is the power dissipation of the BC860BE6327HTSA1?
The power dissipation is 330 mW. - Why is the BC860BE6327HTSA1 preferred for audio frequency applications?
It is preferred due to its high current gain and low collector-emitter saturation voltage. - Can the BC860BE6327HTSA1 be used in high-frequency applications?
Yes, it can be used in high-frequency applications due to its high transition frequency. - What is the emitter-base voltage of the BC860BE6327HTSA1?
The maximum emitter-base voltage is 5 V. - Who is the manufacturer of the BC860BE6327HTSA1?
The manufacturer is Infineon Technologies.