BC857BE6327HTSA1
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Infineon Technologies BC857BE6327HTSA1

Manufacturer No:
BC857BE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BE6327HTSA1 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for use in a variety of electronic circuits, particularly in automotive and general-purpose applications. It features a small signal design, making it suitable for low to moderate current applications. The transistor is packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount package, which is compact and ideal for space-constrained designs.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 45 V
Collector Current (Ic) 100 mA
Emitter-Base Voltage (Vebo) 5 V
Collector-Base Voltage (Vcbo) 50 V
Transition Frequency (ft) 250 MHz
Collector-Emitter Saturation Voltage (Vce(sat)) 0.65 @ 5mA, 100mA V
Maximum Power Dissipation (Pd) 330 mW
Operating Temperature Range -65 to 150 °C
Package Type SOT-23-3 (TO-236-3, SC-59)
RoHS Status Compliant

Key Features

  • Compact Package: The SOT-23-3 package is small and suitable for space-constrained designs.
  • Low Power Consumption: Maximum power dissipation of 330 mW, making it energy-efficient.
  • Wide Operating Temperature Range: Operates from -65°C to 150°C, suitable for various environmental conditions.
  • High Reliability: Compliant with automotive standards (AEC-Q101) and RoHS compliant.
  • Low Saturation Voltage: Vce(sat) of 0.65 V at 5 mA and 100 mA, ensuring efficient operation in saturation mode.

Applications

  • Automotive Electronics: Suitable for use in automotive systems due to its compliance with AEC-Q101 standards.
  • General-Purpose Amplification: Can be used in various amplification circuits requiring low to moderate current levels.
  • Switching Circuits: Applicable in switching applications due to its low saturation voltage and moderate current handling capability.
  • Consumer Electronics: Used in consumer electronic devices where compact size and low power consumption are essential.

Q & A

  1. What is the collector-emitter voltage rating of the BC857BE6327HTSA1 transistor?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current of the BC857BE6327HTSA1 transistor?

    The maximum collector current is 100 mA.

  3. What is the emitter-base voltage rating of the BC857BE6327HTSA1 transistor?

    The emitter-base voltage rating is 5 V.

  4. What is the transition frequency of the BC857BE6327HTSA1 transistor?

    The transition frequency is 250 MHz.

  5. What is the maximum power dissipation of the BC857BE6327HTSA1 transistor?

    The maximum power dissipation is 330 mW.

  6. What is the operating temperature range of the BC857BE6327HTSA1 transistor?

    The operating temperature range is from -65°C to 150°C.

  7. Is the BC857BE6327HTSA1 transistor RoHS compliant?

    Yes, the BC857BE6327HTSA1 transistor is RoHS compliant.

  8. What package type is the BC857BE6327HTSA1 transistor available in?

    The transistor is available in the SOT-23-3 (TO-236-3, SC-59) package.

  9. Is the BC857BE6327HTSA1 transistor suitable for automotive applications?

    Yes, it is suitable for automotive applications and complies with AEC-Q101 standards.

  10. What is the typical collector-emitter saturation voltage of the BC857BE6327HTSA1 transistor?

    The typical collector-emitter saturation voltage is 0.65 V at 5 mA and 100 mA.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC857BE6327HTSA1 BC857CE6327HTSA1 BC857AE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 330 mW 330 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23

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