Overview
The 2PB709ARW,115 is a surface-mount PNP bipolar junction transistor (BJT) produced by Nexperia USA Inc., which was previously part of NXP USA Inc. This transistor is designed for various electronic applications requiring high performance and reliability.
Key Specifications
Category | Specification |
---|---|
Manufacturer | Nexperia USA Inc. (formerly NXP USA Inc.) |
Transistor Type | PNP |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Mounting Type | Surface Mount |
Voltage - Collector Emitter Breakdown (Max) | 45 V |
Current - Collector (Ic) (Max) | 100 mA |
Frequency - Transition | 70 MHz |
Power - Max | 250 mW |
Operating Temperature | 150°C (TJ) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
Key Features
- High collector current of up to 100 mA.
- High transition frequency of 70 MHz, making it suitable for high-frequency applications.
- Low Vce saturation voltage of 500 mV at 10 mA and 100 mA, ensuring efficient switching.
- High DC current gain (hFE) of 210 at 2 mA and 10 V.
- Surface mount package (TO-236-3, SC-59, SOT-23-3) for easy integration into modern electronic designs.
- Operating temperature up to 150°C (TJ), enhancing reliability in various environments.
Applications
The 2PB709ARW,115 is versatile and can be used in a variety of applications, including:
- Switching circuits where high current and frequency are required.
- Amplifier circuits that need high gain and low noise.
- Automotive and industrial control systems due to its robust operating temperature range.
- Consumer electronics such as audio equipment and power supplies.
Q & A
- What is the maximum collector current of the 2PB709ARW,115 transistor?
The maximum collector current is 100 mA. - What is the transition frequency of this transistor?
The transition frequency is 70 MHz. - What is the maximum voltage - collector emitter breakdown for this transistor?
The maximum voltage - collector emitter breakdown is 45 V. - What is the package type of the 2PB709ARW,115 transistor?
The package types include TO-236-3, SC-59, and SOT-23-3. - Is the 2PB709ARW,115 still in production?
No, the 2PB709ARW,115 is obsolete and no longer manufactured. - What is the DC current gain (hFE) of this transistor?
The DC current gain (hFE) is 210 at 2 mA and 10 V. - What is the operating temperature range of the 2PB709ARW,115 transistor?
The operating temperature range is up to 150°C (TJ). - What are some common applications for the 2PB709ARW,115 transistor?
Common applications include switching circuits, amplifier circuits, automotive and industrial control systems, and consumer electronics. - What is the Vce saturation voltage for this transistor?
The Vce saturation voltage is 500 mV at 10 mA and 100 mA. - What is the current - collector cutoff (ICBO) for the 2PB709ARW,115 transistor?
The current - collector cutoff (ICBO) is 10 nA.