2PB709ARW,115
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NXP USA Inc. 2PB709ARW,115

Manufacturer No:
2PB709ARW,115
Manufacturer:
NXP USA Inc.
Package:
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Description:
NOW NEXPERIA 2PB709ARW - SMALL S
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Product Introduction

Overview

The 2PB709ARW,115 is a surface-mount PNP bipolar junction transistor (BJT) produced by Nexperia USA Inc., which was previously part of NXP USA Inc. This transistor is designed for various electronic applications requiring high performance and reliability.

Key Specifications

CategorySpecification
ManufacturerNexperia USA Inc. (formerly NXP USA Inc.)
Transistor TypePNP
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Voltage - Collector Emitter Breakdown (Max)45 V
Current - Collector (Ic) (Max)100 mA
Frequency - Transition70 MHz
Power - Max250 mW
Operating Temperature150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce210 @ 2mA, 10V
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)10nA (ICBO)

Key Features

  • High collector current of up to 100 mA.
  • High transition frequency of 70 MHz, making it suitable for high-frequency applications.
  • Low Vce saturation voltage of 500 mV at 10 mA and 100 mA, ensuring efficient switching.
  • High DC current gain (hFE) of 210 at 2 mA and 10 V.
  • Surface mount package (TO-236-3, SC-59, SOT-23-3) for easy integration into modern electronic designs.
  • Operating temperature up to 150°C (TJ), enhancing reliability in various environments.

Applications

The 2PB709ARW,115 is versatile and can be used in a variety of applications, including:

  • Switching circuits where high current and frequency are required.
  • Amplifier circuits that need high gain and low noise.
  • Automotive and industrial control systems due to its robust operating temperature range.
  • Consumer electronics such as audio equipment and power supplies.

Q & A

  1. What is the maximum collector current of the 2PB709ARW,115 transistor?
    The maximum collector current is 100 mA.
  2. What is the transition frequency of this transistor?
    The transition frequency is 70 MHz.
  3. What is the maximum voltage - collector emitter breakdown for this transistor?
    The maximum voltage - collector emitter breakdown is 45 V.
  4. What is the package type of the 2PB709ARW,115 transistor?
    The package types include TO-236-3, SC-59, and SOT-23-3.
  5. Is the 2PB709ARW,115 still in production?
    No, the 2PB709ARW,115 is obsolete and no longer manufactured.
  6. What is the DC current gain (hFE) of this transistor?
    The DC current gain (hFE) is 210 at 2 mA and 10 V.
  7. What is the operating temperature range of the 2PB709ARW,115 transistor?
    The operating temperature range is up to 150°C (TJ).
  8. What are some common applications for the 2PB709ARW,115 transistor?
    Common applications include switching circuits, amplifier circuits, automotive and industrial control systems, and consumer electronics.
  9. What is the Vce saturation voltage for this transistor?
    The Vce saturation voltage is 500 mV at 10 mA and 100 mA.
  10. What is the current - collector cutoff (ICBO) for the 2PB709ARW,115 transistor?
    The current - collector cutoff (ICBO) is 10 nA.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 2mA, 10V
Power - Max:200 mW
Frequency - Transition:70MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number 2PB709ARW,115 2PB709ASW,115 2PB709AQW,115 2PB709AR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Obsolete Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V 290 @ 2mA, 10V 160 @ 2mA, 10V 210 @ 2mA, 10V
Power - Max 200 mW 200 mW 200 mW 250 mW
Frequency - Transition 70MHz 80MHz 60MHz 70MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-323 SMT3; MPAK SMT3; MPAK

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