MJD50TF
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onsemi MJD50TF

Manufacturer No:
MJD50TF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD50TF is an NPN Bipolar Power Transistor produced by onsemi. This transistor is designed for various high-reliability applications, including line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications. It is electrically similar to popular transistors like the TIP47 and TIP50, making it a versatile component for a range of electronic systems.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 500 V
Collector-Emitter Voltage (VCEO) 400 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (DC) (IC) 1 A
Collector Current (Pulse) (ICP) 2 A
Base Current (IB) 0.6 A
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to 150 °C
Collector Dissipation (TC = 25°C) (PC) 15.0 W
Collector Dissipation (TA = 25°C) 1.56 W
DC Current Gain (hFE) 30 to 150
Collector-Emitter Saturation Voltage (VCE(sat)) 1 V
Base-Emitter On Voltage (VBE(on)) 1.5 V
Current Gain Bandwidth Product (fT) 10 MHz

Key Features

  • High-Voltage and High-Reliability
  • D-PAK for Surface-Mount Applications
  • Lead-Formed for Surface Mount Application (No Suffix) and Straight Lead Version (I-PAK, '-I' Suffix)
  • Electrically Similar to Popular TIP47 and TIP50
  • Pb-Free and RoHS Compliant
  • AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

Applications

  • Line Operated Audio Output Amplifiers
  • Switch-Mode Power Supply Drivers
  • Other Switching Applications

Q & A

  1. What is the collector-base voltage (VCBO) of the MJD50TF transistor?

    The collector-base voltage (VCBO) of the MJD50TF transistor is 500 V.

  2. What is the maximum collector current (IC) for the MJD50TF transistor?

    The maximum collector current (IC) for the MJD50TF transistor is 1 A.

  3. What is the junction temperature (TJ) rating for the MJD50TF transistor?

    The junction temperature (TJ) rating for the MJD50TF transistor is 150°C.

  4. Is the MJD50TF transistor RoHS compliant?
  5. What are the typical applications of the MJD50TF transistor?

    The MJD50TF transistor is typically used in line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications.

  6. What is the current gain bandwidth product (fT) of the MJD50TF transistor?

    The current gain bandwidth product (fT) of the MJD50TF transistor is 10 MHz.

  7. Is the MJD50TF transistor suitable for automotive applications?
  8. What is the collector-emitter saturation voltage (VCE(sat)) of the MJD50TF transistor?

    The collector-emitter saturation voltage (VCE(sat)) of the MJD50TF transistor is 1 V.

  9. What is the base-emitter on voltage (VBE(on)) of the MJD50TF transistor?

    The base-emitter on voltage (VBE(on)) of the MJD50TF transistor is 1.5 V.

  10. What is the package type of the MJD50TF transistor?

    The MJD50TF transistor is available in a TO-252 3L (DPAK) package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 1A
Current - Collector Cutoff (Max):200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 10V
Power - Max:1.56 W
Frequency - Transition:10MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-Pak
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In Stock

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Same Series
MJD47TF
MJD47TF
TRANS NPN 250V 1A DPAK

Similar Products

Part Number MJD50TF MJD350TF MJD50T4
Manufacturer onsemi onsemi STMicroelectronics
Product Status Active Obsolete Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 500 mA 1 A
Voltage - Collector Emitter Breakdown (Max) 400 V 300 V 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A - 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 200µA 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 50mA, 10V 30 @ 300mA, 10V
Power - Max 1.56 W 15 W 15 W
Frequency - Transition 10MHz - 10MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak D-Pak DPAK

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