Overview
The NCV57080BDR2G, produced by onsemi, is a high-current single-channel isolated IGBT/MOSFET gate driver. This device is designed to enhance system efficiency and reliability in high-power applications. It features internal galvanic isolation of 3.75 kVrms, making it suitable for a variety of demanding environments. The NCV57080BDR2G is available in a narrow-body SOIC-8 package and offers several configuration options, including Active Miller Clamp, negative power supply, and separate high and low driver outputs, depending on the version.
Key Specifications
Parameter | Unit | Minimum | Typical | Maximum |
---|---|---|---|---|
Maximum Junction Temperature (TJ(max)) | °C | -40 | - | 150 |
Storage Temperature Range (TSTG) | °C | -65 | - | 150 |
ESD Capability, Human Body Model (ESDHBM) | kV | - | - | ±2 |
ESD Capability, Charged Device Model (ESDCDM) | kV | - | - | ±2 |
Peak Output Current | A | -6.5 | - | 6.5 |
UVLO1 Output Enabled (VUVLO1-OUT-ON) | V | - | - | 3.1 |
UVLO2 Output Enabled (VUVLO2-OUT-ON) | V | 12.4 | 12.9 | 13.4 |
Input Low Level Voltage (VIL) | V | - | - | 0.3 × VDD1 |
Input High Level Voltage (VIH) | V | 0.7 × VDD1 | - | VDD1 |
Output Low State (VOUTL1) | V | - | 0.15 | 0.3 |
Key Features
- High Peak Output Current: +6.5 A / -6.5 A
- Low Clamp Voltage Drop: Eliminates the need for a negative power supply to prevent spurious gate turn-on (Version A)
- Short Propagation Delays with Accurate Matching
- IGBT/MOSFET Gate Clamping during Short Circuit
- IGBT/MOSFET Gate Active Pull Down
- Tight UVLO Thresholds for Bias Flexibility
- Wide Bias Voltage Range including Negative VEE2 (Version B)
- 3.3 V, 5 V, and 15 V Logic Input Compatibility
- 3.75 kVRMS VISO (I-O) for UL1577 Compliance
- High Transient and Electromagnetic Immunity
- AEC-Q100 Qualified and PPAP Capable for Automotive Applications
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
- Motor Control
- Uninterruptible Power Supplies (UPS)
- Automotive Applications
- Industrial Power Supplies
- Solar Inverters
- HVAC Systems
Q & A
- What is the maximum junction temperature for the NCV57080BDR2G?
The maximum junction temperature is 150°C. - What is the peak output current of the NCV57080BDR2G?
The peak output current is +6.5 A / -6.5 A. - What are the UVLO thresholds for the NCV57080BDR2G?
The UVLO1 output enabled threshold is 3.1 V, and the UVLO2 output enabled threshold is between 12.4 V and 13.4 V. - Is the NCV57080BDR2G compliant with automotive standards?
Yes, it is AEC-Q100 qualified and PPAP capable. - What are the typical applications of the NCV57080BDR2G?
Typical applications include motor control, UPS, automotive applications, industrial power supplies, solar inverters, and HVAC systems. - What is the isolation voltage of the NCV57080BDR2G?
The isolation voltage is 3.75 kVRMS. - What package type is the NCV57080BDR2G available in?
The device is available in a narrow-body SOIC-8 package. - Does the NCV57080BDR2G support negative power supply?
Yes, Version B supports a negative power supply (VEE2). - Is the NCV57080BDR2G RoHS compliant?
Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. - What are the input voltage levels supported by the NCV57080BDR2G?
The device supports 3.3 V, 5 V, and 15 V logic input levels.