Overview
The NJD35N04T4G is an NPN Darlington Power Transistor manufactured by onsemi. This high-voltage power Darlington transistor is specifically designed for inductive applications, offering exceptional performance and reliability. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Rating Symbol | Value | Unit |
|---|---|---|
| Collector-Emitter Sustaining Voltage (VCEO) | 350 | Vdc |
| Collector-Base Breakdown Voltage (VCBO) | 700 | Vdc |
| Collector-Emitter Breakdown Voltage (VCES) | 700 | Vdc |
| Emitter-Base Voltage (VEBO) | 5.0 | Vdc |
| Collector Current Continuous (IC) | 4.0 | Adc |
| Collector Current Peak (ICM) | 8.0 | Adc |
| Base Current (IB) | 0.5 | Adc |
| Total Power Dissipation @ TC = 25°C (PD) | 45 | W |
| Derate above 25°C | 0.36 | W/°C |
| Operating and Storage Junction Temperature Range (TJ, Tstg) | -65 to +150 | °C |
| Thermal Resistance Junction-to-Case (RJC) | 2.78 | °C/W |
| Thermal Resistance Junction-to-Ambient (RJA) | 71.4 | °C/W |
Key Features
- Exceptional Safe Operating Area (SOA)
- High VCE and high current gain
- NJV prefix for automotive and other applications requiring unique site and control change requirements
- AEC-Q101 qualified and PPAP capable
- Pb-Free devices
- Reliable performance at higher powers
- Designed for inductive loads
- Very low current requirements
Applications
- Internal Combustion Engine Ignition Control
- Switching Regulators
- Motor Controls
- Light Ballast
- Photo Flash
Q & A
- What is the NJD35N04T4G transistor used for?
The NJD35N04T4G is used for inductive applications such as internal combustion engine ignition control, switching regulators, motor controls, light ballast, and photo flash.
- What are the key features of the NJD35N04T4G transistor?
Key features include exceptional Safe Operating Area, high VCE and high current gain, AEC-Q101 qualification, PPAP capability, and Pb-Free construction.
- What is the maximum collector-emitter sustaining voltage (VCEO) of the NJD35N04T4G?
The maximum collector-emitter sustaining voltage (VCEO) is 350 Vdc.
- What is the continuous collector current (IC) rating of the NJD35N04T4G?
The continuous collector current (IC) rating is 4.0 Adc.
- What is the total power dissipation (PD) of the NJD35N04T4G at 25°C?
The total power dissipation (PD) at 25°C is 45 W.
- Is the NJD35N04T4G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the thermal resistance junction-to-case (RJC) of the NJD35N04T4G?
The thermal resistance junction-to-case (RJC) is 2.78 °C/W.
- What is the operating and storage junction temperature range of the NJD35N04T4G?
The operating and storage junction temperature range is -65 to +150 °C.
- Is the NJD35N04T4G a Pb-Free device?
Yes, the NJD35N04T4G is a Pb-Free device.
- What package types are available for the NJD35N04T4G?
The NJD35N04T4G is available in DPAK (Pb-Free) packages, with options for rail and tape & reel packaging.
