MMBT3906LT1HTSA1
  • Share:

Infineon Technologies MMBT3906LT1HTSA1

Manufacturer No:
MMBT3906LT1HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 0.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3906LT1HTSA1 is a PNP silicon switching transistor manufactured by Infineon Technologies. This bipolar junction transistor (BJT) is designed for general-purpose switching applications. It is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (V_CBO)40 V
Collector-Emitter Voltage (V_CEO)40 V
Emitter-Base Voltage (V_EBO)5 V
Collector Current (I_C)0.2 A
DC Current Gain (h_FE)100 to 300
Collector-Emitter Saturation Voltage (V_CE(sat))0.1 to 0.3 V
Operating Temperature Range-55°C to 150°C

Key Features

  • High DC current gain: 100 to 300, making it suitable for a wide range of switching applications.
  • Low collector-emitter saturation voltage: 0.1 to 0.3 V, which reduces power consumption and heat generation.
  • High collector current: Up to 0.2 A, allowing for robust switching capabilities.
  • Wide operating temperature range: -55°C to 150°C, ensuring reliability in various environmental conditions.

Applications

The MMBT3906LT1HTSA1 is versatile and can be used in a variety of applications, including:

  • General-purpose switching circuits.
  • Amplifier circuits.
  • Power management systems.
  • Automotive electronics.
  • Consumer electronics.

Q & A

  1. What is the transistor type of the MMBT3906LT1HTSA1?
    The MMBT3906LT1HTSA1 is a PNP Bipolar Junction Transistor (BJT).
  2. What is the maximum collector current of the MMBT3906LT1HTSA1?
    The maximum collector current is 0.2 A.
  3. What is the typical DC current gain of the MMBT3906LT1HTSA1?
    The typical DC current gain is between 100 to 300.
  4. What is the collector-emitter saturation voltage of the MMBT3906LT1HTSA1?
    The collector-emitter saturation voltage is between 0.1 to 0.3 V.
  5. What is the operating temperature range of the MMBT3906LT1HTSA1?
    The operating temperature range is -55°C to 150°C.
  6. In what types of applications is the MMBT3906LT1HTSA1 commonly used?
    The MMBT3906LT1HTSA1 is commonly used in general-purpose switching circuits, amplifier circuits, power management systems, automotive electronics, and consumer electronics.
  7. Who is the manufacturer of the MMBT3906LT1HTSA1?
    The manufacturer is Infineon Technologies.
  8. What are the key benefits of using the MMBT3906LT1HTSA1?
    The key benefits include high DC current gain, low collector-emitter saturation voltage, and a wide operating temperature range.
  9. Is the MMBT3906LT1HTSA1 suitable for high-power applications?
    No, it is more suited for general-purpose switching and low to medium power applications.
  10. Where can I find detailed specifications for the MMBT3906LT1HTSA1?
    Detailed specifications can be found in the datasheet available from sources like Infineon Technologies, Mouser Electronics, and other electronic component suppliers.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.39
470

Please send RFQ , we will respond immediately.

Same Series
SMBT3906SH6327XTSA1
SMBT3906SH6327XTSA1
TRANS 2PNP 40V 0.2A SOT363
SMBT3906UE6327HTSA1
SMBT3906UE6327HTSA1
TRANS 2PNP 40V 0.2A SC74-6
SMBT3906SE6327HTSA1
SMBT3906SE6327HTSA1
TRANS 2PNP 40V 0.2A SOT363
SMBT3906E6327HTSA1
SMBT3906E6327HTSA1
TRANS PNP 40V 0.2A SOT23
SMBT 3906 E6767
SMBT 3906 E6767
TRANS PNP 40V 0.2A SOT23
SMBT 3906 B5003
SMBT 3906 B5003
TRANS PNP 40V 0.2A SOT23

Similar Products

Part Number MMBT3906LT1HTSA1 MMBT3904LT1HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 250MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

Related Product By Categories

BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS70-06WE6327
BAS70-06WE6327
Infineon Technologies
SCHOTTKY DIODE
BAS7005E6433HTMA1
BAS7005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS7004SE6327HTSA1
BAS7004SE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS 70-05 B5003
BAS 70-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BC857CWH6327
BC857CWH6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT323-3
BCX56-16E6433
BCX56-16E6433
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP 69-16 E6327
BCP 69-16 E6327
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5