MMBT3906LT1HTSA1
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Infineon Technologies MMBT3906LT1HTSA1

Manufacturer No:
MMBT3906LT1HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 0.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3906LT1HTSA1 is a PNP silicon switching transistor manufactured by Infineon Technologies. This bipolar junction transistor (BJT) is designed for general-purpose switching applications. It is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (V_CBO)40 V
Collector-Emitter Voltage (V_CEO)40 V
Emitter-Base Voltage (V_EBO)5 V
Collector Current (I_C)0.2 A
DC Current Gain (h_FE)100 to 300
Collector-Emitter Saturation Voltage (V_CE(sat))0.1 to 0.3 V
Operating Temperature Range-55°C to 150°C

Key Features

  • High DC current gain: 100 to 300, making it suitable for a wide range of switching applications.
  • Low collector-emitter saturation voltage: 0.1 to 0.3 V, which reduces power consumption and heat generation.
  • High collector current: Up to 0.2 A, allowing for robust switching capabilities.
  • Wide operating temperature range: -55°C to 150°C, ensuring reliability in various environmental conditions.

Applications

The MMBT3906LT1HTSA1 is versatile and can be used in a variety of applications, including:

  • General-purpose switching circuits.
  • Amplifier circuits.
  • Power management systems.
  • Automotive electronics.
  • Consumer electronics.

Q & A

  1. What is the transistor type of the MMBT3906LT1HTSA1?
    The MMBT3906LT1HTSA1 is a PNP Bipolar Junction Transistor (BJT).
  2. What is the maximum collector current of the MMBT3906LT1HTSA1?
    The maximum collector current is 0.2 A.
  3. What is the typical DC current gain of the MMBT3906LT1HTSA1?
    The typical DC current gain is between 100 to 300.
  4. What is the collector-emitter saturation voltage of the MMBT3906LT1HTSA1?
    The collector-emitter saturation voltage is between 0.1 to 0.3 V.
  5. What is the operating temperature range of the MMBT3906LT1HTSA1?
    The operating temperature range is -55°C to 150°C.
  6. In what types of applications is the MMBT3906LT1HTSA1 commonly used?
    The MMBT3906LT1HTSA1 is commonly used in general-purpose switching circuits, amplifier circuits, power management systems, automotive electronics, and consumer electronics.
  7. Who is the manufacturer of the MMBT3906LT1HTSA1?
    The manufacturer is Infineon Technologies.
  8. What are the key benefits of using the MMBT3906LT1HTSA1?
    The key benefits include high DC current gain, low collector-emitter saturation voltage, and a wide operating temperature range.
  9. Is the MMBT3906LT1HTSA1 suitable for high-power applications?
    No, it is more suited for general-purpose switching and low to medium power applications.
  10. Where can I find detailed specifications for the MMBT3906LT1HTSA1?
    Detailed specifications can be found in the datasheet available from sources like Infineon Technologies, Mouser Electronics, and other electronic component suppliers.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number MMBT3906LT1HTSA1 MMBT3904LT1HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 250MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

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