Overview
The IPW65R080CFDFKSA1 is a high-performance N-channel MOSFET from Infineon Technologies, part of their CoolMOS™ CFD2 series. This device is designed for high-voltage applications and is particularly suited for automotive and industrial uses. It features advanced superjunction (SJ) technology, which enhances energy efficiency and reduces switching losses. The IPW65R080CFDFKSA1 is known for its fast switching capabilities, robust body diode, and improved commutation behavior, making it an excellent choice for applications requiring high reliability and efficiency.
Key Specifications
| Parameter | Symbol | Unit | Value |
|---|---|---|---|
| Drain-Source Voltage | Vds | V | 650 |
| Continuous Drain Current | Id | A | 43.3 |
| On Resistance | Rds(on) | Ω | 0.072 |
| Gate Threshold Voltage | Vgs(th) | V | 4 |
| Gate Charge | Qg | nC | 170 |
| Reverse Recovery Charge | Qrr | µC | 1.2 |
| Peak Reverse Recovery Current | Irr | A | 10 |
| Package Type | TO-247-3 |
Key Features
- 650V technology with integrated fast body diode, reducing switching losses and improving efficiency.
- Limited voltage overshoot during hard commutation, enhancing reliability and reducing EMI.
- Significant reduction in gate charge (Qg) compared to 600V CFD technology, improving switching performance.
- Tighter Rds(on)max to Rds(on)typ window, ensuring consistent performance.
- Ultra-fast body diode and high commutation ruggedness, making it suitable for resonant switching applications.
- Self-limiting di/dt and dv/dt, reducing the risk of overvoltage and overcurrent conditions.
- Lower turn-on and turn-off delay times, enhancing overall system efficiency.
- Easy to design-in due to its robust and reliable operation.
Applications
- Automotive systems, including electric vehicles and hybrid vehicles, due to its AEC-Q101 qualification.
- Industrial power supplies and converters, where high efficiency and reliability are crucial.
- Resonant switching applications, such as inverter systems and DC-DC converters, due to its fast switching and robust body diode.
- High-power motor drives and control systems, benefiting from its low switching losses and high commutation ruggedness).
Q & A
- What is the drain-source voltage rating of the IPW65R080CFDFKSA1?
The drain-source voltage rating is 650V.
- What is the continuous drain current of the IPW65R080CFDFKSA1?
The continuous drain current is 43.3A.
- What is the on-resistance (Rds(on)) of the IPW65R080CFDFKSA1?
The on-resistance is 0.072Ω.
- What package type is the IPW65R080CFDFKSA1 available in?
The device is available in the TO-247-3 package.
- Is the IPW65R080CFDFKSA1 RoHS compliant?
Yes, the device is RoHS compliant.
- What are the key benefits of the CoolMOS™ CFD2 technology used in the IPW65R080CFDFKSA1?
The key benefits include low switching losses, limited voltage overshoot, significant Qg reduction, and tighter Rds(on)max to Rds(on)typ window.
- What applications is the IPW65R080CFDFKSA1 suitable for?
The device is suitable for automotive, industrial power supplies, resonant switching applications, and high-power motor drives.
- What is the gate threshold voltage of the IPW65R080CFDFKSA1?
The gate threshold voltage is 4V.
- What is the reverse recovery charge (Qrr) of the IPW65R080CFDFKSA1?
The reverse recovery charge is 1.2µC.
- What is the peak reverse recovery current (Irr) of the IPW65R080CFDFKSA1?
The peak reverse recovery current is 10A.
