Overview
The IPW65R080CFDFKSA2 is a high-performance N-Channel MOSFET from Infineon Technologies, part of their CoolMOS™ CFDA Superjunction (SJ) series. This device is specifically designed for automotive applications, offering high voltage and current handling capabilities along with enhanced reliability and efficiency. The IPW65R080CFDFKSA2 integrates a fast body diode, reducing switching losses and improving overall system performance.
Key Specifications
| Parameter | Symbol | Unit | Value |
|---|---|---|---|
| Drain-Source Voltage | Vds | V | 650 |
| Continuous Drain Current | Id | A | 43.3 (at Tj = 25°C), 27.4 (at Tj = 100°C) |
| Pulsed Drain Current | Id | A | 137 (at Tj = 25°C) |
| On Resistance | Rds(on) | mΩ | 80 (max) |
| Threshold Voltage | Vgs(th) | V | 4 |
| Gate Charge | Qg | nC | 170 (typ) |
| Thermal Resistance, Junction-Case | Rth(j-c) | °C/W | 0.32 |
| Thermal Resistance, Junction-Ambient | Rth(j-a) | °C/W | 62 |
| Package | PG-TO247-3 |
Key Features
- Integrated fast body diode for reduced switching losses and improved efficiency.
- Low gate charge (Qg) and low repetitive commutation charge (Qrr) on the body diode.
- Self-limiting di/dt and dv/dt during hard commutation.
- Reduced turn-on and turn-off delay times.
- Compliant to AEC Q101 standard for automotive applications.
- Higher breakdown voltage providing an increased safety margin.
- Lower EMI appearance and easier design integration.
- Better light load efficiency and lower switching losses.
- High quality and reliability suitable for automotive and other demanding applications.
Applications
- Unidirectional and bidirectional DC-DC converters.
- Battery chargers.
- HID lighting systems.
- 48 V mild-hybrid electric vehicle (MHEV) applications.
Q & A
- What is the maximum drain-source voltage of the IPW65R080CFDFKSA2?
The maximum drain-source voltage is 650 V. - What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current is 43.3 A at 25°C and 27.4 A at 100°C. - What is the on-resistance (Rds(on)) of the MOSFET?
The on-resistance is 80 mΩ (max). - Is the IPW65R080CFDFKSA2 compliant with automotive standards?
Yes, it is compliant with the AEC Q101 standard. - What are the key benefits of the integrated fast body diode?
The integrated fast body diode reduces switching losses, improves efficiency, and provides lower EMI appearance. - What are the typical applications for this MOSFET?
Typical applications include unidirectional and bidirectional DC-DC converters, battery chargers, and HID lighting systems. - What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 0.32 °C/W. - Can this MOSFET be used in life-support devices or systems?
No, it requires express written approval from Infineon Technologies for use in life-support devices or systems. - What is the package type of the IPW65R080CFDFKSA2?
The package type is PG-TO247-3. - What are the benefits of using this MOSFET in terms of switching frequency and duty cycle?
It allows for higher switching frequency and/or higher duty cycle due to lower switching losses.
