SPW47N60C3FKSA1
  • Share:

Infineon Technologies SPW47N60C3FKSA1

Manufacturer No:
SPW47N60C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 47A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SPW47N60C3FKSA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. This device is part of the CoolMOS™ family, known for its advanced technology that offers high efficiency and reliability in various power management applications. The SPW47N60C3FKSA1 is housed in a TO-247 package, making it suitable for a wide range of power electronics applications.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)650 V
Continuous Drain Current (Id) @ 25°C47 A (Tc)
Gate to Source Voltage (Vgs)±20 V
Threshold Voltage (Vth)3.0 - 5.0 V
On-Resistance (Rds(on))Typically 90 mΩ
Thermal Resistance (RthJC)0.5 K/W
Maximum Junction Temperature (Tj)175 °C
Package TypeTO-247

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • High continuous drain current of 47 A, ensuring robust performance.
  • Low on-resistance (Rds(on)) of typically 90 mΩ, reducing power losses.
  • Advanced CoolMOS™ technology for high efficiency and reliability.
  • TO-247 package for easy mounting and thermal management.
  • Low thermal resistance (RthJC) of 0.5 K/W, enhancing heat dissipation.

Applications

The SPW47N60C3FKSA1 MOSFET is designed for use in a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power management and control systems.
  • Automotive electronics, particularly in electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the SPW47N60C3FKSA1?
    The maximum drain to source voltage (Vdss) is 650 V.
  2. What is the continuous drain current (Id) rating at 25°C?
    The continuous drain current (Id) rating at 25°C is 47 A (Tc).
  3. What is the typical on-resistance (Rds(on)) of the SPW47N60C3FKSA1?
    The typical on-resistance (Rds(on)) is 90 mΩ.
  4. What is the maximum junction temperature (Tj) for this MOSFET?
    The maximum junction temperature (Tj) is 175 °C.
  5. In what package is the SPW47N60C3FKSA1 available?
    The SPW47N60C3FKSA1 is available in a TO-247 package.
  6. What is the thermal resistance (RthJC) of this device?
    The thermal resistance (RthJC) is 0.5 K/W.
  7. What technology does the SPW47N60C3FKSA1 use?
    The SPW47N60C3FKSA1 uses advanced CoolMOS™ technology.
  8. What are some common applications for the SPW47N60C3FKSA1?
    Common applications include power supplies, motor control systems, renewable energy systems, industrial power management, and automotive electronics.
  9. What is the gate to source voltage (Vgs) range for this MOSFET?
    The gate to source voltage (Vgs) range is ±20 V.
  10. Is the SPW47N60C3FKSA1 suitable for use in life-support devices?
    No, the SPW47N60C3FKSA1 should not be used in life-support devices or systems without the express written approval of Infineon Technologies.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs:320 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):415W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$20.00
42

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPW47N60C3FKSA1 SPW47N65C3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 30A, 10V 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs 320 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V 7000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 415W (Tc) 415W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
BAW56UE6327
BAW56UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAV70SH6827XTSA1
BAV70SH6827XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS7004SE6327HTSA1
BAS7004SE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAV 99S H6827
BAV 99S H6827
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS21E6359HTMA1
BAS21E6359HTMA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
FF600R12ME4B11BPSA2
FF600R12ME4B11BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223