SPW47N60C3FKSA1
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Infineon Technologies SPW47N60C3FKSA1

Manufacturer No:
SPW47N60C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 47A TO247-3
Delivery:
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Product Introduction

Overview

The SPW47N60C3FKSA1 is a high-performance N-Channel MOSFET produced by Infineon Technologies. This device is part of the CoolMOS™ family, known for its advanced technology that offers high efficiency and reliability in various power management applications. The SPW47N60C3FKSA1 is housed in a TO-247 package, making it suitable for a wide range of power electronics applications.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)650 V
Continuous Drain Current (Id) @ 25°C47 A (Tc)
Gate to Source Voltage (Vgs)±20 V
Threshold Voltage (Vth)3.0 - 5.0 V
On-Resistance (Rds(on))Typically 90 mΩ
Thermal Resistance (RthJC)0.5 K/W
Maximum Junction Temperature (Tj)175 °C
Package TypeTO-247

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • High continuous drain current of 47 A, ensuring robust performance.
  • Low on-resistance (Rds(on)) of typically 90 mΩ, reducing power losses.
  • Advanced CoolMOS™ technology for high efficiency and reliability.
  • TO-247 package for easy mounting and thermal management.
  • Low thermal resistance (RthJC) of 0.5 K/W, enhancing heat dissipation.

Applications

The SPW47N60C3FKSA1 MOSFET is designed for use in a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power management and control systems.
  • Automotive electronics, particularly in electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the SPW47N60C3FKSA1?
    The maximum drain to source voltage (Vdss) is 650 V.
  2. What is the continuous drain current (Id) rating at 25°C?
    The continuous drain current (Id) rating at 25°C is 47 A (Tc).
  3. What is the typical on-resistance (Rds(on)) of the SPW47N60C3FKSA1?
    The typical on-resistance (Rds(on)) is 90 mΩ.
  4. What is the maximum junction temperature (Tj) for this MOSFET?
    The maximum junction temperature (Tj) is 175 °C.
  5. In what package is the SPW47N60C3FKSA1 available?
    The SPW47N60C3FKSA1 is available in a TO-247 package.
  6. What is the thermal resistance (RthJC) of this device?
    The thermal resistance (RthJC) is 0.5 K/W.
  7. What technology does the SPW47N60C3FKSA1 use?
    The SPW47N60C3FKSA1 uses advanced CoolMOS™ technology.
  8. What are some common applications for the SPW47N60C3FKSA1?
    Common applications include power supplies, motor control systems, renewable energy systems, industrial power management, and automotive electronics.
  9. What is the gate to source voltage (Vgs) range for this MOSFET?
    The gate to source voltage (Vgs) range is ±20 V.
  10. Is the SPW47N60C3FKSA1 suitable for use in life-support devices?
    No, the SPW47N60C3FKSA1 should not be used in life-support devices or systems without the express written approval of Infineon Technologies.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs:320 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):415W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Similar Products

Part Number SPW47N60C3FKSA1 SPW47N65C3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 30A, 10V 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs 320 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V 7000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 415W (Tc) 415W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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