STP13NK60Z
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STMicroelectronics STP13NK60Z

Manufacturer No:
STP13NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP13NK60Z is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP13NK60Z is designed for demanding applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25 °C 13 A
Continuous Drain Current (ID) at TC = 100 °C 8.2 A
Pulsed Drain Current (IDM) 52 A
Total Dissipation at TC = 25 °C 150 W
Static Drain-Source On Resistance (RDS(on)) < 0.55 Ω
Gate Threshold Voltage (VGS(th)) 3 to 4.5 V
Operating Junction Temperature (Tj) -55 to 150 °C
Package Type TO-220

Key Features

  • Gate Charge Minimized: Low gate charge for efficient switching.
  • Low Intrinsic Capacitances: Reduces switching losses and improves high-frequency performance.
  • Good Manufacturing Repeatability: Ensures consistent performance across devices.
  • Built-in Zener Diodes: Enhances ESD capability and protects against voltage transients.
  • High dv/dt Capability: Suitable for demanding applications with high voltage and current transients.

Applications

The STP13NK60Z is ideal for various switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive electronics.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP13NK60Z?

    600 V.

  2. What is the continuous drain current (ID) at 25 °C?

    13 A.

  3. What is the static drain-source on resistance (RDS(on)) of the STP13NK60Z?

    < 0.55 Ω.

  4. What is the gate threshold voltage (VGS(th)) range?

    3 to 4.5 V.

  5. What type of package is the STP13NK60Z available in?

    TO-220.

  6. What are the built-in Zener diodes used for?

    To enhance ESD capability and protect against voltage transients.

  7. What is the maximum operating junction temperature (Tj)?

    150 °C.

  8. What are some typical applications of the STP13NK60Z?

    Power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  9. What is the total dissipation at 25 °C?

    150 W.

  10. What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?

    0.83 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2030 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP13NK60Z STP16NK60Z STP14NK60Z STP10NK60Z STP12NK60Z STP13NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 14A (Tc) 13.5A (Tc) 10A (Tc) 10A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4.5A, 10V 420mOhm @ 7A, 10V 500mOhm @ 6A, 10V 750mOhm @ 4.5A, 10V 640mOhm @ 5A, 10V 480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 86 nC @ 10 V 75 nC @ 10 V 70 nC @ 10 V 59 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V 2650 pF @ 25 V 2220 pF @ 25 V 1370 pF @ 25 V 1740 pF @ 25 V 1600 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) 190W (Tc) 160W (Tc) 115W (Tc) 150W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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