NTMFS5C646NLT1G
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onsemi NTMFS5C646NLT1G

Manufacturer No:
NTMFS5C646NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 19A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS5C646NLT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a 5-DFN (5x6) surface mount package, which is lead-free and RoHS compliant.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current)19 A (at Ta), 89 A (at Tc)
RDS(on) (On-Resistance)Typically 2.5 mΩ (at VGS = 10 V, ID = 30 A)
Pd (Power Dissipation)66 W (at Tc)
TJ (Junction Temperature)-55°C to +150°C
Package Type5-DFN (5x6), Surface Mount

Key Features

  • High current handling capability with a continuous drain current of up to 19 A at ambient temperature and 89 A at case temperature.
  • Low on-resistance (RDS(on)) of typically 2.5 mΩ, enhancing efficiency in power switching applications.
  • Wide operating temperature range from -55°C to +150°C, making it suitable for various environmental conditions.
  • Lead-free and RoHS compliant 5-DFN package for surface mount applications.
  • Enhancement mode operation for precise control over the MOSFET.

Applications

The NTMFS5C646NLT1G is versatile and can be used in a variety of applications, including:

  • Power management systems such as DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Switching and amplification in audio and industrial equipment.
  • Automotive systems requiring high reliability and performance.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the NTMFS5C646NLT1G?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current rating at ambient temperature?
    The continuous drain current (ID) at ambient temperature (Ta) is 19 A.
  3. What is the typical on-resistance of the MOSFET?
    The typical on-resistance (RDS(on)) is 2.5 mΩ at VGS = 10 V and ID = 30 A.
  4. What is the operating temperature range of the NTMFS5C646NLT1G?
    The operating temperature range is from -55°C to +150°C.
  5. What type of package does the NTMFS5C646NLT1G come in?
    The MOSFET is packaged in a 5-DFN (5x6) surface mount package.
  6. Is the NTMFS5C646NLT1G RoHS compliant?
    Yes, the NTMFS5C646NLT1G is lead-free and RoHS compliant.
  7. What are some common applications for the NTMFS5C646NLT1G?
    Common applications include power management systems, motor control, switching and amplification in audio and industrial equipment, automotive systems, and renewable energy systems.
  8. What is the power dissipation rating of the MOSFET?
    The power dissipation (Pd) rating is 66 W at case temperature (Tc).
  9. What is the channel mode of the NTMFS5C646NLT1G?
    The channel mode is enhancement mode.
  10. Where can I find detailed specifications for the NTMFS5C646NLT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website, as well as on distributor websites like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2164 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS5C646NLT1G NTMFS5C646NT1G NTMFS5C646NLT3G NTMFS5C645NLT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta) 20A (Ta), 93A (Tc) 20A (Ta), 93A (Tc) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V 5mOhm @ 16A, 10V 4.7mOhm @ 50A, 10V 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 80µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.7 nC @ 10 V 19.2 nC @ 10 V 33.7 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2164 pF @ 25 V 1500 pF @ 10 V 2164 pF @ 25 V 2200 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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