FCH040N65S3-F155
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onsemi FCH040N65S3-F155

Manufacturer No:
FCH040N65S3-F155
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 650V 65A TO247-3
Delivery:
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Product Introduction

Overview

The FCH040N65S3-F155 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET® III series. This device is designed for high-power applications requiring robust performance and reliability. With its easy drive characteristics, it is suitable for a variety of industrial and automotive systems.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)650V
Continuous Drain Current (Id) @ 25°C65A
Pulse Drain Current (Idm)162.5A
On-Resistance (Rds(on))40
Power Dissipation (Pd)417W
Package TypeTO-247

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 65 A and pulse drain current of 162.5 A.
  • Low on-resistance of 40 mΩ, reducing power losses.
  • Easy drive characteristics for simplified gate drive requirements.
  • TO-247 package for robust thermal performance.

Applications

The FCH040N65S3-F155 is designed for various high-power applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicles and hybrid vehicles.
  • Power conversion and switching applications.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum drain to source voltage of the FCH040N65S3-F155?
    The maximum drain to source voltage is 650 V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 65 A.
  3. What is the on-resistance of the FCH040N65S3-F155?
    The on-resistance is 40 mΩ.
  4. What is the package type of the FCH040N65S3-F155?
    The package type is TO-247.
  5. What are some typical applications for this MOSFET?
    Typical applications include industrial power supplies, automotive systems, power conversion, and high-frequency switching circuits.
  6. What is the maximum pulse drain current?
    The maximum pulse drain current is 162.5 A.
  7. What is the power dissipation rating of the FCH040N65S3-F155?
    The power dissipation rating is 417 W.
  8. Is the FCH040N65S3-F155 easy to drive?
    Yes, it has easy drive characteristics, simplifying gate drive requirements.
  9. What series does the FCH040N65S3-F155 belong to?
    The FCH040N65S3-F155 belongs to the SUPERFET® III series.
  10. Where can I find detailed specifications for the FCH040N65S3-F155?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Digi-Key and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 6.5mA
Gate Charge (Qg) (Max) @ Vgs:136 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4740 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number FCH040N65S3-F155 FCHD040N65S3-F155
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V 40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 6.5mA 4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V 136 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4740 pF @ 400 V 4740 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 417W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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