FCH040N65S3-F155
  • Share:

onsemi FCH040N65S3-F155

Manufacturer No:
FCH040N65S3-F155
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 650V 65A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH040N65S3-F155 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET® III series. This device is designed for high-power applications requiring robust performance and reliability. With its easy drive characteristics, it is suitable for a variety of industrial and automotive systems.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)650V
Continuous Drain Current (Id) @ 25°C65A
Pulse Drain Current (Idm)162.5A
On-Resistance (Rds(on))40
Power Dissipation (Pd)417W
Package TypeTO-247

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 65 A and pulse drain current of 162.5 A.
  • Low on-resistance of 40 mΩ, reducing power losses.
  • Easy drive characteristics for simplified gate drive requirements.
  • TO-247 package for robust thermal performance.

Applications

The FCH040N65S3-F155 is designed for various high-power applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicles and hybrid vehicles.
  • Power conversion and switching applications.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum drain to source voltage of the FCH040N65S3-F155?
    The maximum drain to source voltage is 650 V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 65 A.
  3. What is the on-resistance of the FCH040N65S3-F155?
    The on-resistance is 40 mΩ.
  4. What is the package type of the FCH040N65S3-F155?
    The package type is TO-247.
  5. What are some typical applications for this MOSFET?
    Typical applications include industrial power supplies, automotive systems, power conversion, and high-frequency switching circuits.
  6. What is the maximum pulse drain current?
    The maximum pulse drain current is 162.5 A.
  7. What is the power dissipation rating of the FCH040N65S3-F155?
    The power dissipation rating is 417 W.
  8. Is the FCH040N65S3-F155 easy to drive?
    Yes, it has easy drive characteristics, simplifying gate drive requirements.
  9. What series does the FCH040N65S3-F155 belong to?
    The FCH040N65S3-F155 belongs to the SUPERFET® III series.
  10. Where can I find detailed specifications for the FCH040N65S3-F155?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Digi-Key and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 6.5mA
Gate Charge (Qg) (Max) @ Vgs:136 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4740 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$9.94
50

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCH040N65S3-F155 FCHD040N65S3-F155
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V 40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 6.5mA 4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V 136 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4740 pF @ 400 V 4740 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 417W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC