Overview
The CSD17575Q3T is a 30-V, N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it an ideal choice for high-efficiency power management systems. The MOSFET features a low on-state resistance and low thermal resistance, which are crucial for reducing energy losses and improving overall system performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDS) | 30 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 60 | A |
| Pulsed Drain Current (IDM) | 182 | A |
| Drain-to-Source On-Resistance (RDS(on)) | 1.9 - 2.6 | mΩ |
| Gate-to-Source Threshold Voltage (VGS(th)) | 1.1 - 1.8 | V |
| Gate Charge (Qg) | 23 | nC |
| Power Dissipation (PD) | 108 | W |
| Operating Junction Temperature (TJ) | -55 to 150 | °C |
| Package Type | VSON-CLIP8 | |
| Package Dimensions | 3.3 mm x 3.3 mm |
Key Features
- Low on-state resistance (RDS(on)) of 1.9 - 2.6 mΩ, reducing energy losses in power conversion applications.
- Low thermal resistance, enhancing heat dissipation and system reliability.
- Avalanche rated, providing robustness against transient voltage spikes.
- Pb-free terminal plating and RoHS compliant, ensuring environmental sustainability.
- Halogen-free, aligning with modern environmental standards.
- Low gate charge (Qg) of 23 nC, facilitating faster switching times and higher efficiency.
Applications
- Power conversion systems, including DC-DC converters and power supplies, where high efficiency and low losses are critical.
- High-power-density applications such as server power supplies, active clamp flyback converters, and high-efficiency AC/DC adapters.
- USB Type-C power delivery systems and fast charging applications, requiring high current handling and efficiency.
- Automotive and industrial power management systems, where reliability and robustness are essential).
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD17575Q3T?
The maximum drain-to-source voltage (VDS) is 30 V).
- What is the continuous drain current (ID) rating of this MOSFET?
The continuous drain current (ID) rating is 60 A).
- What is the typical on-state resistance (RDS(on)) of the CSD17575Q3T?
The typical on-state resistance (RDS(on)) is between 1.9 and 2.6 mΩ).
- What is the gate-to-source threshold voltage (VGS(th)) range for this MOSFET?
The gate-to-source threshold voltage (VGS(th)) range is between 1.1 and 1.8 V).
- Is the CSD17575Q3T RoHS compliant?
Yes, the CSD17575Q3T is RoHS compliant).
- What is the package type and dimensions of the CSD17575Q3T?
The package type is VSON-CLIP8, and the dimensions are 3.3 mm x 3.3 mm).
- What are some typical applications for the CSD17575Q3T?
Typical applications include power conversion systems, high-power-density applications, USB Type-C power delivery systems, and automotive and industrial power management systems).
- What is the maximum operating junction temperature (TJ) for this MOSFET?
The maximum operating junction temperature (TJ) is between -55°C and 150°C).
- Does the CSD17575Q3T have low thermal resistance?
Yes, the CSD17575Q3T is designed with low thermal resistance to enhance heat dissipation and system reliability).
- Is the CSD17575Q3T avalanche rated?
Yes, the CSD17575Q3T is avalanche rated, providing robustness against transient voltage spikes).
