STF12N120K5
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STMicroelectronics STF12N120K5

Manufacturer No:
STF12N120K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1200V 12A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF12N120K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using their innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure that enhances the device's performance and efficiency. The STF12N120K5 is part of the MDmesh K5 series, known for its super-junction architecture, which offers the industry's best Rds(on) and figure of merit, resulting in increased power density and efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1200 V
VGS (Gate-Source Voltage)±30 V
Rds(on) (Drain-Source On-Resistance)Typically 0.19 Ω at VGS = 10 V
ID (Drain Current)12 A
PD (Power Dissipation)Dependent on package and thermal conditions
Qg (Gate Charge)Ultra low gate charge
PackageTO-247, TO-247 Long Lead (TO-247 LL)

Key Features

  • MDmesh™ K5 technology for enhanced performance and efficiency
  • Super-junction architecture for low Rds(on) and high figure of merit
  • Ultra low gate charge for reduced switching losses
  • High voltage capability up to 1200 V
  • High current handling up to 12 A
  • Available in TO-247 and TO-247 Long Lead (TO-247 LL) packages

Applications

The STF12N120K5 is suitable for various high-power applications, including:

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • High-voltage industrial and medical equipment

Q & A

  1. What is the maximum drain-source voltage of the STF12N120K5?
    The maximum drain-source voltage is 1200 V.
  2. What is the typical Rds(on) of the STF12N120K5?
    The typical Rds(on) is 0.19 Ω at VGS = 10 V.
  3. What technology is used in the STF12N120K5?
    The STF12N120K5 uses MDmesh™ K5 technology.
  4. What are the available packages for the STF12N120K5?
    The STF12N120K5 is available in TO-247 and TO-247 Long Lead (TO-247 LL) packages.
  5. What is the maximum drain current of the STF12N120K5?
    The maximum drain current is 12 A.
  6. What are some common applications of the STF12N120K5?
    Common applications include switch-mode power supplies, DC-DC converters, motor control and drives, power factor correction circuits, and high-voltage industrial and medical equipment.
  7. What is the significance of the super-junction architecture in the STF12N120K5?
    The super-junction architecture provides the industry's best Rds(on) and figure of merit, resulting in increased power density and efficiency.
  8. How does the ultra low gate charge benefit the STF12N120K5?
    The ultra low gate charge reduces switching losses, enhancing overall efficiency.
  9. Where can I find detailed specifications for the STF12N120K5?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.
  10. What is the gate-source voltage range for the STF12N120K5?
    The gate-source voltage range is ±30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:44.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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