STD10NF10T4
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STMicroelectronics STD10NF10T4

Manufacturer No:
STD10NF10T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 13A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD10NF10T4 is a medium-voltage N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET™ II series, which is designed to minimize input capacitance and gate charge. This makes it ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters, particularly in Telecom and Computer applications. The STD10NF10T4 is also suitable for any application requiring low gate charge drive capabilities.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 100 V
Drain-Source On-Resistance (RDS(on)) 0.115 (typ.), 0.130 (max.) Ω
Continuous Drain Current (ID) at TC = 25 °C 13 A
Continuous Drain Current (ID) at TC = 100 °C 9 A
Pulsed Drain Current (IDM) 52 A
Gate-Source Voltage (VGS) ±20 V
Operating Junction Temperature (Tj) -55 to 175 °C
Thermal Resistance Junction-Case (Rthj-case) 3 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 50 °C/W
Input Capacitance (Ciss) 460 pF pF
Output Capacitance (Coss) 70 pF pF
Reverse Transfer Capacitance (Crss) 30 pF pF
Total Gate Charge (Qg) 15.3 to 21 nC nC

Key Features

  • Exceptional dv/dt capability
  • Low input capacitance and gate charge due to STripFET™ II process
  • Ideal for high-efficiency isolated DC-DC converters
  • Suitable for applications with low gate charge drive requirements
  • Available in DPAK (TO-252) package
  • ECOPACK® compliant for environmental sustainability

Applications

  • Advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications
  • Any application requiring low gate charge drive capabilities
  • Industrial and automotive applications

Q & A

  1. What is the maximum drain-source voltage of the STD10NF10T4?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-resistance of the STD10NF10T4?

    The typical on-resistance (RDS(on)) is 0.115 Ω.

  3. What is the continuous drain current at 25 °C for the STD10NF10T4?

    The continuous drain current (ID) at 25 °C is 13 A.

  4. What is the operating junction temperature range for the STD10NF10T4?

    The operating junction temperature range is -55 to 175 °C.

  5. What package type is the STD10NF10T4 available in?

    The STD10NF10T4 is available in a DPAK (TO-252) package.

  6. What are the key features of the STripFET™ II process used in the STD10NF10T4?

    The STripFET™ II process minimizes input capacitance and gate charge, making it ideal for high-efficiency applications.

  7. Is the STD10NF10T4 RoHS compliant?
  8. What are some typical applications for the STD10NF10T4?

    Typical applications include advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications, and any application requiring low gate charge drive capabilities.

  9. What is the thermal resistance junction-case (Rthj-case) for the STD10NF10T4?

    The thermal resistance junction-case (Rthj-case) is 3 °C/W.

  10. What is the total gate charge (Qg) for the STD10NF10T4?

    The total gate charge (Qg) is between 15.3 and 21 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD10NF10T4 STD15NF10T4 STD20NF10T4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 23A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V 65mOhm @ 12A, 10V 45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 40 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 25 V 870 pF @ 25 V 1200 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 50W (Tc) 70W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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