AO4407A
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Alpha & Omega Semiconductor Inc. AO4407A

Manufacturer No:
AO4407A
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 12A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AO4407A is a 30V P-Channel MOSFET produced by Alpha & Omega Semiconductor Inc. This device utilizes advanced trench technology to achieve excellent on-state resistance (RDS(ON)) and ultra-low gate charge, making it highly efficient for various applications. With a 25V gate rating, it is suitable for use as a load switch or in pulse-width modulation (PWM) applications. The AO4407A is packaged in a standard SOIC-8 format, which is compact and versatile for different types of circuit boards.

Key Specifications

Parameter Symbol Rating/Value Units
Maximum Drain-Source Voltage VDS -30 V
Maximum Gate-Source Voltage VGS -25 V
Maximum Drain Current ID -12 A
On-State Resistance (RDS(ON)) RDS(ON) < 11mΩ (VGS = -20V), < 13mΩ (VGS = -10V), < 17mΩ (VGS = -6V)
Maximum Power Dissipation Pd 3.1 W
Maximum Junction Temperature Tj 150 °C
Total Gate Charge Qg 30 nC
Rise Time tr 9.4 ns
Output Capacitance Coss 370 pF
Package SOIC-8

Key Features

  • Advanced trench technology for low on-state resistance (RDS(ON)) and ultra-low gate charge.
  • 25V gate rating for enhanced versatility.
  • 100% UIS (Unclamped Inductive Switching) tested and 100% Rg (gate resistance) tested.
  • RoHS and halogen-free compliant.
  • Compact SOIC-8 package for easy placement on various circuit boards.
  • Suitable for use as a load switch or in PWM applications.
  • High current capability with a maximum drain current of -12A (VGS = -20V).

Applications

  • Load switches in various electronic systems.
  • Pulse-width modulation (PWM) applications requiring precise control.
  • Notebook PCs and desktop PCs.
  • Other applications requiring high voltage tolerance and efficient switching.

Q & A

  1. What is the maximum drain-source voltage of the AO4407A MOSFET?

    The maximum drain-source voltage (VDS) of the AO4407A is -30V.

  2. What is the maximum gate-source voltage of the AO4407A MOSFET?

    The maximum gate-source voltage (VGS) of the AO4407A is -25V.

  3. What is the on-state resistance (RDS(ON)) of the AO4407A MOSFET?

    The on-state resistance (RDS(ON)) of the AO4407A is less than 11mΩ (VGS = -20V), less than 13mΩ (VGS = -10V), and less than 17mΩ (VGS = -6V).

  4. What is the maximum power dissipation of the AO4407A MOSFET?

    The maximum power dissipation (Pd) of the AO4407A is 3.1W.

  5. What is the package type of the AO4407A MOSFET?

    The AO4407A is packaged in a standard SOIC-8 format.

  6. Is the AO4407A MOSFET RoHS compliant?

    Yes, the AO4407A is RoHS and halogen-free compliant.

  7. What are the typical applications of the AO4407A MOSFET?

    The AO4407A is typically used as a load switch or in PWM applications, and it is also suitable for use in notebook PCs, desktop PCs, and other high-voltage tolerance applications.

  8. What is the maximum junction temperature of the AO4407A MOSFET?

    The maximum junction temperature (Tj) of the AO4407A is 150°C.

  9. What is the total gate charge of the AO4407A MOSFET?

    The total gate charge (Qg) of the AO4407A is 30 nC.

  10. Is the AO4407A MOSFET fully tested for UIS and Rg?

    Yes, the AO4407A is 100% tested for Unclamped Inductive Switching (UIS) and gate resistance (Rg).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 20V
Rds On (Max) @ Id, Vgs:11mOhm @ 12A, 20V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number AO4407A AO4447A AO4407L AO4407AL AO4406A AO4407
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Not For New Designs Not For New Designs Obsolete Obsolete Not For New Designs Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 17A (Ta) 12A (Ta) 12A (Ta) 13A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 20V 4V, 10V 5V, 20V 6V, 20V 4.5V, 10V 5V, 20V
Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 20V 7mOhm @ 17A, 10V 14mOhm @ 10A, 10V 11mOhm @ 12A, 20V 11.5mOhm @ 12A, 10V 13mOhm @ 12A, 20V
Vgs(th) (Max) @ Id 3V @ 250µA 1.6V @ 250µA 3V @ 250µA 3V @ 250µA 2.5V @ 250µA 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 105 nC @ 10 V 45 nC @ 10 V 39 nC @ 10 V 17 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±25V ±20V ±25V ±25V ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V 5500 pF @ 15 V 2500 pF @ 15 V 2600 pF @ 15 V 910 pF @ 15 V 2600 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 3.1W (Ta) 3.1W (Ta) 3.1W (Ta) 3.1W (Ta) 3.1W (Ta) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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