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AOD4185
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Alpha & Omega Semiconductor Inc. AOD4185

Manufacturer No:
AOD4185
Manufacturer:
Alpha & Omega Semiconductor Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 40A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AOD4185 is a P-channel MOSFET transistor manufactured by Alpha and Omega Semiconductor Inc. This device is designed using advanced trench technology, which provides excellent on-resistance (RDS(ON)) and low gate charge. It is particularly suited for high current applications due to its superior thermal resistance and fast switching characteristics.

Key Specifications

Parameter Value
Type of Transistor MOSFET
Type of Control Channel P-Channel
Maximum Drain-Source Voltage (Vds) -40 V
Maximum Gate-Source Voltage (Vgs) 20 V
Maximum Gate-Threshold Voltage (Vgs(th)) 3 V
Maximum Drain Current (Id) -40 A
Maximum Junction Temperature (Tj) 175 °C
Total Gate Charge (Qg) 42 nC
Rise Time (tr) 20 nS
Output Capacitance (Coss) 280 pF
Maximum Drain-Source On-State Resistance (Rds) 0.015 Ohm (at Vgs = -4.5 V)
Package TO-252 (DPAK)

Key Features

  • P-channel MOSFET
  • 40 V drain-to-source voltage
  • 40 A continuous drain current
  • Low on-resistance (RDS(ON))
  • Fast switching characteristics
  • Advanced trench technology for excellent RDS(ON) and low gate charge
  • Excellent thermal resistance
  • RoHS compliant and halogen-free

Applications

  • Switch mode power supplies
  • Motor drives
  • Voltage regulators
  • Lighting control
  • Industrial automation

Q & A

  1. What is the maximum drain-to-source voltage of the AOD4185 MOSFET?

    The maximum drain-to-source voltage (Vds) is -40 V.

  2. What is the maximum continuous drain current of the AOD4185?

    The maximum continuous drain current (Id) is -40 A at 25°C.

  3. What is the typical on-resistance (RDS(ON)) of the AOD4185?

    The typical on-resistance (RDS(ON)) is less than 0.015 Ohm at Vgs = -4.5 V.

  4. What package type is the AOD4185 available in?

    The AOD4185 is packaged in a TO-252 (DPAK) surface mount package.

  5. Is the AOD4185 RoHS compliant?

    Yes, the AOD4185 is RoHS compliant and halogen-free.

  6. What are the key applications of the AOD4185 MOSFET?

    The AOD4185 is used in switch mode power supplies, motor drives, voltage regulators, lighting control, and industrial automation.

  7. What is the maximum junction temperature of the AOD4185?

    The maximum junction temperature (Tj) is 175 °C.

  8. What is the total gate charge (Qg) of the AOD4185?

    The total gate charge (Qg) is 42 nC.

  9. What is the rise time (tr) of the AOD4185?

    The rise time (tr) is 20 nS.

  10. Is the AOD4185 100% UIS tested?

    Yes, the AOD4185 is 100% UIS tested.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2550 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 62.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.87
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Similar Products

Part Number AOD4185 AOD4189 AOD4186 AOD4185L AOD418G AOD418 AOD4180 AOD4182
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Product Status Active Active Active Obsolete Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 30 V 30 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc) 10A (Ta), 35A (Tc) 40A (Tc) 13.5A (Ta), 36A (Tc) 13.5A (Ta), 36A (Tc) 10A (Ta), 54A (Tc) 8.5A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V 22mOhm @ 12A, 10V 15mOhm @ 20A, 10V 15mOhm @ 20A, 10V 7.5mOhm @ 20A, 10V 7.5mOhm @ 20A, 10V 14mOhm @ 20A, 10V 15.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.7V @ 250µA 3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 4V @ 250µA 4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 41 nC @ 10 V 20 nC @ 10 V 55 nC @ 10 V 24 nC @ 10 V 24 nC @ 10 V 38 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 20 V 1870 pF @ 20 V 1200 pF @ 20 V 2550 pF @ 20 V 1380 pF @ 15 V 1380 pF @ 15 V 2410 pF @ 40 V 2005 pF @ 40 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 62.5W (Tc) 2.5W (Ta), 62.5W (Tc) 2.5W (Ta), 50W (Tc) 62.5W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc) 3.1W (Ta), 150W (Tc) 2.5W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252 (DPAK) TO-252 (DPAK) TO-252 (DPAK) TO-252 (DPAK) TO-252 (DPAK) TO-252 (DPAK) TO-252 (DPAK) TO-252 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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