FQD4P25TM-WS
  • Share:

onsemi FQD4P25TM-WS

Manufacturer No:
FQD4P25TM-WS
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 250V 3.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD4P25TM-WS is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by onsemi. This device is part of the QFET series and is known for its high performance and reliability in various electronic applications. The FQD4P25TM-WS is packaged in a DPAK (TO-252) package, making it suitable for surface mount technology (SMT) assembly.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)-250V
ID (Continuous Drain Current)-1.96A
Pd (Power Dissipation)45W
TJ (Junction Temperature)+150°C
RθJC (Thermal Resistance, Junction to Case)2.78°C/W
Channel ModeEnhancement

Key Features

  • High voltage rating of -250V, making it suitable for high-voltage applications.
  • Continuous drain current of -1.96A, ensuring robust current handling.
  • Power dissipation of 45W, allowing for efficient heat management.
  • Enhancement mode operation, providing low on-resistance and high switching speed.
  • DPAK (TO-252) package, ideal for surface mount technology and compact designs.

Applications

The FQD4P25TM-WS is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-power audio equipment.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control systems and power management circuits.

Q & A

  1. What is the maximum drain-source voltage of the FQD4P25TM-WS?
    The maximum drain-source voltage is -250V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is -1.96A.
  3. What is the power dissipation capability of the FQD4P25TM-WS?
    The power dissipation capability is 45W.
  4. What is the maximum junction temperature for this device?
    The maximum junction temperature is +150°C.
  5. What type of package does the FQD4P25TM-WS come in?
    The FQD4P25TM-WS comes in a DPAK (TO-252) package.
  6. Is the FQD4P25TM-WS suitable for surface mount technology?
    Yes, it is suitable for surface mount technology due to its DPAK package.
  7. What is the thermal resistance from junction to case for this MOSFET?
    The thermal resistance from junction to case is 2.78°C/W.
  8. In what mode does the FQD4P25TM-WS operate?
    The FQD4P25TM-WS operates in enhancement mode.
  9. What are some common applications for the FQD4P25TM-WS?
    Common applications include power supplies, motor control systems, audio amplifiers, automotive systems, and industrial control systems.
  10. Where can I find detailed specifications for the FQD4P25TM-WS?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.03
481

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQD4P25TM-WS FQD4N25TM-WS
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 1.55A, 10V 1.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 5.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V 200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5