FQD4P25TM-WS
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onsemi FQD4P25TM-WS

Manufacturer No:
FQD4P25TM-WS
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 250V 3.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD4P25TM-WS is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by onsemi. This device is part of the QFET series and is known for its high performance and reliability in various electronic applications. The FQD4P25TM-WS is packaged in a DPAK (TO-252) package, making it suitable for surface mount technology (SMT) assembly.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)-250V
ID (Continuous Drain Current)-1.96A
Pd (Power Dissipation)45W
TJ (Junction Temperature)+150°C
RθJC (Thermal Resistance, Junction to Case)2.78°C/W
Channel ModeEnhancement

Key Features

  • High voltage rating of -250V, making it suitable for high-voltage applications.
  • Continuous drain current of -1.96A, ensuring robust current handling.
  • Power dissipation of 45W, allowing for efficient heat management.
  • Enhancement mode operation, providing low on-resistance and high switching speed.
  • DPAK (TO-252) package, ideal for surface mount technology and compact designs.

Applications

The FQD4P25TM-WS is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-power audio equipment.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control systems and power management circuits.

Q & A

  1. What is the maximum drain-source voltage of the FQD4P25TM-WS?
    The maximum drain-source voltage is -250V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is -1.96A.
  3. What is the power dissipation capability of the FQD4P25TM-WS?
    The power dissipation capability is 45W.
  4. What is the maximum junction temperature for this device?
    The maximum junction temperature is +150°C.
  5. What type of package does the FQD4P25TM-WS come in?
    The FQD4P25TM-WS comes in a DPAK (TO-252) package.
  6. Is the FQD4P25TM-WS suitable for surface mount technology?
    Yes, it is suitable for surface mount technology due to its DPAK package.
  7. What is the thermal resistance from junction to case for this MOSFET?
    The thermal resistance from junction to case is 2.78°C/W.
  8. In what mode does the FQD4P25TM-WS operate?
    The FQD4P25TM-WS operates in enhancement mode.
  9. What are some common applications for the FQD4P25TM-WS?
    Common applications include power supplies, motor control systems, audio amplifiers, automotive systems, and industrial control systems.
  10. Where can I find detailed specifications for the FQD4P25TM-WS?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD4P25TM-WS FQD4N25TM-WS
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 1.55A, 10V 1.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 5.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V 200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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