Overview
The NTHD3101FT1G is a power MOSFET produced by onsemi, featuring a leadless SMD package that is 40% smaller than the TSOP-6 package. This device combines a P-channel MOSFET with a Schottky diode, making it ideal for various power management applications. The leadless SMD package enhances thermal characteristics and simplifies circuit design with independent pinouts for each device.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±8.0 | V |
| Continuous Drain Current (Steady State, TJ = 25°C) | ID | -3.2 | A |
| Power Dissipation (Steady State, TJ = 25°C) | PD | 1.1 | W |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Drain-to-Source On-Resistance (VGS = -4.5 V, ID = -3.2 A) | RDS(on) | 64-80 | mΩ |
| Forward Transconductance (VDS = -10 V, ID = -2.9 A) | gFS | 8.0 | S |
| Total Gate Charge (VGS = -4.5 V, VDS = -10 V, ID = -3.2 A) | QG(TOT) | 7.4 | nC |
| Turn-On Delay Time (VGS = -4.5 V, VDD = -10 V, ID = -3.2 A, RG = 2.4 Ω) | td(ON) | 5.8 | ns |
| Turn-Off Delay Time (VGS = -4.5 V, VDD = -10 V, ID = -3.2 A, RG = 2.4 Ω) | td(OFF) | 16 | ns |
Key Features
- Leadless SMD package, 40% smaller than TSOP-6 package, providing great thermal characteristics.
- Complementary P-channel MOSFET with a Schottky diode.
- Trench P-channel for low on-resistance.
- Ultra-low VF Schottky diode.
- Pb-free packages available.
- Independent pinout to each device to ease circuit design.
Applications
- Lithium-ion battery charging.
- High-side DC-DC conversion circuits.
- High-side drive for small brushless DC motors.
- Power management in portable, battery-powered products.
Q & A
- What is the maximum drain-to-source voltage for the NTHD3101FT1G? The maximum drain-to-source voltage is -20 V.
- What is the continuous drain current rating at 25°C? The continuous drain current is -3.2 A at 25°C.
- What are the operating junction and storage temperatures for this MOSFET? The operating junction and storage temperatures range from -55°C to 150°C.
- What is the typical on-resistance of the MOSFET? The typical on-resistance is 64-80 mΩ at VGS = -4.5 V and ID = -3.2 A.
- What is the forward transconductance of the MOSFET? The forward transconductance is 8.0 S at VDS = -10 V and ID = -2.9 A.
- What is the total gate charge for the MOSFET? The total gate charge is 7.4 nC at VGS = -4.5 V, VDS = -10 V, and ID = -3.2 A.
- What are the turn-on and turn-off delay times for the MOSFET? The turn-on delay time is 5.8 ns, and the turn-off delay time is 16 ns.
- What is the maximum instantaneous forward voltage of the Schottky diode? The maximum instantaneous forward voltage is 0.510 V at IF = 1.0 A.
- What are the typical applications of the NTHD3101FT1G? Typical applications include lithium-ion battery charging, high-side DC-DC conversion circuits, and power management in portable, battery-powered products.
- Is the NTHD3101FT1G Pb-free? Yes, Pb-free packages are available for the NTHD3101FT1G.
