Overview
The STP80PF55 is a P-channel Power MOSFET developed by STMicroelectronics, utilizing their unique 'single feature size' strip-based process. This technology results in extremely high packing density, which contributes to low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The MOSFET is designed to offer high performance and reliability in various power management applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 55 | V |
| Gate-Source Voltage (VGS) | ±16 | V |
| Continuous Drain Current (ID) at TC = 25°C | 80 | A |
| Continuous Drain Current (ID) at TC = 100°C | 57 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Total Dissipation at TC = 25°C | 300 | W |
| Derating Factor | 2 | W/°C |
| Peak Diode Recovery Voltage Slope (dv/dt) | 7 | V/ns |
| Single Pulse Avalanche Energy (EAS) | 1.4 | J |
| Operating Junction Temperature (Tj) | -55 to 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-a) | 62.5 | °C/W |
| Static Drain-Source On Resistance (RDS(on)) | < 0.018 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 to 4 | V |
Key Features
- Extremely high dv/dt capability
- 100% avalanche tested for robustness
- Application-oriented characterization for optimized performance
- High packing density for low on-resistance
- Rugged avalanche characteristics
- Less critical alignment steps for improved manufacturing reproducibility
Applications
The STP80PF55 is suitable for various switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- General-purpose power management in industrial and consumer electronics
Q & A
- What is the maximum drain-source voltage (VDS) of the STP80PF55?
The maximum drain-source voltage (VDS) is 55 V.
- What is the continuous drain current (ID) at 25°C for the STP80PF55?
The continuous drain current (ID) at 25°C is 80 A.
- What is the thermal resistance junction-case (Rthj-case) of the STP80PF55?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.
- What are the key features of the STP80PF55?
The key features include extremely high dv/dt capability, 100% avalanche tested, and application-oriented characterization.
- In what packages is the STP80PF55 available?
The STP80PF55 is available in TO-220 and D2PAK packages.
- What is the maximum operating junction temperature (Tj) for the STP80PF55?
The maximum operating junction temperature (Tj) is -55 to 175 °C.
- What is the static drain-source on resistance (RDS(on)) of the STP80PF55?
The static drain-source on resistance (RDS(on)) is less than 0.018 Ω.
- What are some typical applications of the STP80PF55?
Typical applications include switching applications, power supplies, DC-DC converters, motor control, and general-purpose power management.
- What is the single pulse avalanche energy (EAS) of the STP80PF55?
The single pulse avalanche energy (EAS) is 1.4 J.
- How does the 'single feature size' strip-based process benefit the STP80PF55?
The 'single feature size' strip-based process results in high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility.
