Overview
The FQD19N10LTM is a high-performance N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is designed using Fairchild's proprietary planar stripe, DMOS technology, which enhances its power handling capabilities and efficiency. The MOSFET is packaged in a surface mount TO-252AA (DPAK) package, making it suitable for a variety of applications requiring high current and voltage handling.
Key Specifications
| Parameter | Value |
|---|---|
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 15.6 A (at Tc), 9.8 A (at Ta) |
| Rds On - Drain-Source On Resistance | 100 mΩ |
| Power Dissipation | 2.5 W (at Ta), 50 W (at Tc) |
| Package Type | TO-252AA (DPAK) |
| Number of Channels | 1 Channel |
Key Features
- High voltage and current handling capabilities, making it suitable for power management applications.
- Low on-resistance (Rds On) of 100 mΩ, which reduces power losses and improves efficiency.
- Enhancement mode operation, providing a high level of control over the drain current.
- Surface mount TO-252AA (DPAK) package for easy integration into modern PCB designs.
- Produced using Fairchild's proprietary planar stripe, DMOS technology for enhanced performance.
Applications
The FQD19N10LTM MOSFET is versatile and can be used in a wide range of applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Switching and amplification circuits.
- Automotive and industrial power management systems.
- High-frequency switching applications.
Q & A
- What is the drain-source breakdown voltage of the FQD19N10LTM MOSFET?
The drain-source breakdown voltage is 100 V. - What is the continuous drain current rating of the FQD19N10LTM?
The continuous drain current is 15.6 A at Tc and 9.8 A at Ta. - What is the on-resistance (Rds On) of the FQD19N10LTM?
The on-resistance is 100 mΩ. - In what package is the FQD19N10LTM available?
The FQD19N10LTM is available in a TO-252AA (DPAK) package. - What technology is used to produce the FQD19N10LTM?
The FQD19N10LTM is produced using Fairchild's proprietary planar stripe, DMOS technology. - What are some common applications for the FQD19N10LTM?
Common applications include power supplies, motor control, switching and amplification circuits, automotive and industrial power management, and high-frequency switching applications. - What is the power dissipation rating of the FQD19N10LTM?
The power dissipation is 2.5 W at Ta and 50 W at Tc. - Is the FQD19N10LTM suitable for high-frequency switching?
Yes, the FQD19N10LTM is suitable for high-frequency switching applications due to its low on-resistance and high current handling capabilities. - Can the FQD19N10LTM be used in automotive applications?
Yes, the FQD19N10LTM can be used in automotive applications due to its robust performance and reliability. - Where can I find detailed specifications for the FQD19N10LTM?
Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the onsemi website.
