Overview
The FQD13N10LTM is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, provide superior switching performance, and offer high avalanche energy strength. The device is suitable for a variety of applications, including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 100 | V |
| Drain Current (ID Max) | 10 | A |
| On-State Resistance (RDS(on) Max @ VGS = 10 V) | 180 | mΩ |
| Gate Charge (Qg Typ @ VGS = 10 V) | 12 | nC |
| Reverse Recovery Charge (Qrr Typ) | 0.17 | μC |
| Reverse Recovery Time (trr) | 72 | ns |
| Thermal Resistance, Junction to Case (RθJC Max) | 3.13 | °C/W |
| Package Type | TO-252-3 (DPAK) | |
| Mounting Method | Surface Mount |
Key Features
- Low on-state resistance (RDS(on) = 180 mΩ Max @ VGS = 10 V, ID = 5 A)
- Low gate charge (Typ. 12 nC @ VGS = 10 V)
- Low Crss (Typ. 20 pF)
- 100% avalanche tested
- Pb-free device
- Logic level gate
Applications
- Switched mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power applications
- LCD and LED TVs
Q & A
- What is the maximum drain to source voltage of the FQD13N10LTM MOSFET?
The maximum drain to source voltage (Vdss) is 100 V.
- What is the maximum drain current of the FQD13N10LTM MOSFET?
The maximum drain current (ID Max) is 10 A.
- What is the on-state resistance of the FQD13N10LTM MOSFET at VGS = 10 V?
The on-state resistance (RDS(on) Max) at VGS = 10 V is 180 mΩ.
- What is the typical gate charge of the FQD13N10LTM MOSFET at VGS = 10 V?
The typical gate charge (Qg Typ) at VGS = 10 V is 12 nC.
- Is the FQD13N10LTM MOSFET Pb-free?
- What is the package type of the FQD13N10LTM MOSFET?
The package type is TO-252-3 (DPAK).
- What is the mounting method for the FQD13N10LTM MOSFET?
The mounting method is surface mount.
- What are some common applications for the FQD13N10LTM MOSFET?
Common applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- What is the thermal resistance, junction to case, for the FQD13N10LTM MOSFET?
The thermal resistance, junction to case (RθJC Max), is 3.13 °C/W.
- Is the FQD13N10LTM MOSFET 100% avalanche tested?
