Overview
The STW48N60M6-4 is a high-performance N-channel power MOSFET from STMicroelectronics, utilizing the advanced MDmesh M6 technology. This device is designed for high-power applications requiring low on-resistance and high efficiency. The STW48N60M6-4 features a voltage rating of 600 V, a typical on-resistance (RDS(on)) of 61 mΩ, and a continuous drain current (ID) of 39 A. It is packaged in a TO-247-4 package, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) (On-Resistance) | 61 (typ.), 69 (max.) | mΩ |
| ID (Continuous Drain Current) at TC = 25 °C | 39 | A |
| ID (Continuous Drain Current) at TC = 100 °C | 25 | A |
| IDM (Pulsed Drain Current) | 140 | A |
| PTOT (Total Power Dissipation) at TC = 25 °C | 250 | W |
| VGS (Gate-Source Voltage) | ±25 | V |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| Tj (Operating Junction Temperature Range) | -55 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 0.5 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 50 | °C/W |
Key Features
- Advanced MDmesh M6 technology for improved RDS(on) per area and enhanced switching behavior.
- Low on-resistance (RDS(on)) of 61 mΩ (typ.) and 69 mΩ (max.).
- High continuous drain current (ID) of 39 A at TC = 25 °C.
- Reduced switching losses and lower gate input resistance.
- 100% avalanche tested and Zener-protected.
- Low gate input resistance for easier control.
Applications
- Switching applications.
- LLC converters.
- Boost PFC converters.
Q & A
- What is the voltage rating of the STW48N60M6-4 MOSFET?
The voltage rating of the STW48N60M6-4 MOSFET is 600 V.
- What is the typical on-resistance (RDS(on)) of the STW48N60M6-4?
The typical on-resistance (RDS(on)) is 61 mΩ.
- What is the continuous drain current (ID) of the STW48N60M6-4 at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 39 A.
- What is the maximum pulsed drain current (IDM) of the STW48N60M6-4?
The maximum pulsed drain current (IDM) is 140 A.
- What is the total power dissipation (PTOT) of the STW48N60M6-4 at TC = 25 °C?
The total power dissipation (PTOT) at TC = 25 °C is 250 W.
- What is the gate-source voltage (VGS) range for the STW48N60M6-4?
The gate-source voltage (VGS) range is ±25 V.
- What is the storage temperature range for the STW48N60M6-4?
The storage temperature range is -55 to 150 °C.
- What are the key features of the MDmesh M6 technology used in the STW48N60M6-4?
The MDmesh M6 technology features improved RDS(on) per area, reduced switching losses, lower gate input resistance, and is 100% avalanche tested and Zener-protected.
- In what package is the STW48N60M6-4 available?
The STW48N60M6-4 is available in a TO-247-4 package.
- What are some typical applications for the STW48N60M6-4 MOSFET?
Typical applications include switching applications, LLC converters, and Boost PFC converters.
