STW18NM60ND
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STMicroelectronics STW18NM60ND

Manufacturer No:
STW18NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW18NM60ND is a high-performance N-Channel MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ II series, known for its advanced technology and robust characteristics. The STW18NM60ND is designed to operate at high voltages and currents, making it ideal for various power management and switching applications. With its high drain-source voltage (Vdss) rating of 600V and continuous drain current (Id) of 13A, this MOSFET is well-suited for demanding environments such as flyback converters, LED lighting, and other power electronics.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 13 A
Gate to Source Voltage (Vgs) 25 V
Threshold Voltage (Vgs(th)) 3 V
On-Resistance (Rds On) @ 6.5A, 10V 285
Power Dissipation (Max) 110 W
Operating Temperature -55°C to 150°C °C
Package / Case TO-247-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status RoHS3 Compliant

Key Features

  • High Voltage Capability: The STW18NM60ND can handle a drain-source voltage of up to 600V, making it suitable for high-voltage applications.
  • High Current Handling: With a continuous drain current of 13A, this MOSFET is capable of handling high current loads.
  • Low On-Resistance: The device features a low on-resistance of 285mΩ at 6.5A and 10V, reducing power losses and improving efficiency.
  • Fast Switching Times: The MOSFET has fast rise and fall times, making it suitable for high-frequency applications.
  • Robust Construction: Packaged in a TO-247-3 case, the device is designed for through-hole mounting and offers good thermal management.
  • Environmental Compliance: The STW18NM60ND is RoHS3 compliant and lead-free, ensuring it meets current environmental regulations.

Applications

  • Flyback Converters: The high voltage and current capabilities make this MOSFET ideal for flyback converter applications.
  • LED Lighting: Suitable for LED lighting systems due to its high efficiency and reliability.
  • Power Supplies: Can be used in various power supply designs requiring high voltage and current handling.
  • Motor Control: Applicable in motor control circuits where high current and voltage are necessary.
  • Industrial Power Electronics: Suitable for a wide range of industrial power electronics applications requiring robust and efficient switching.

Q & A

  1. What is the maximum drain-source voltage (Vdss) of the STW18NM60ND?

    The maximum drain-source voltage (Vdss) is 600V.

  2. What is the continuous drain current (Id) rating of this MOSFET?

    The continuous drain current (Id) rating is 13A at 25°C.

  3. What is the threshold voltage (Vgs(th)) of the STW18NM60ND?

    The threshold voltage (Vgs(th)) is 3V.

  4. What is the on-resistance (Rds On) of this MOSFET?

    The on-resistance (Rds On) is 285mΩ at 6.5A and 10V.

  5. What is the operating temperature range of the STW18NM60ND?

    The operating temperature range is -55°C to 150°C.

  6. Is the STW18NM60ND RoHS compliant?

    Yes, the STW18NM60ND is RoHS3 compliant and lead-free.

  7. What is the package type of the STW18NM60ND?

    The package type is TO-247-3.

  8. What are some typical applications of the STW18NM60ND?

    Typical applications include flyback converters, LED lighting, power supplies, motor control, and industrial power electronics.

  9. What is the maximum power dissipation of this MOSFET?

    The maximum power dissipation is 110W.

  10. Does the STW18NM60ND have any special handling requirements due to moisture sensitivity?

    No, it has a Moisture Sensitivity Level (MSL) of 1, which means it does not require special handling.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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STW18NM60ND
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Similar Products

Part Number STW18NM60ND STW28NM60ND STW15NM60ND STW18NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 23A (Tc) 14A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V 150mOhm @ 11.5A, 10V 299mOhm @ 7A, 10V 285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 62.5 nC @ 10 V 40 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1030 pF @ 50 V 2090 pF @ 100 V 1250 pF @ 50 V 1000 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 110W (Tc) 190W (Tc) 125W (Tc) 110W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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