STF18NM60ND
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STMicroelectronics STF18NM60ND

Manufacturer No:
STF18NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF18NM60ND is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced FDmesh II technology. This device is packaged in a TO-220FP package and is designed to offer high efficiency and reliability in various power management applications. The STF18NM60ND features a low on-resistance of 0.25 Ω (typical) and a high drain current of 13 A, making it suitable for demanding high-power converter applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.25 Ω (typ.), 0.280 Ω (max.) Ω
ID (Drain Current) 13 A (continuous at TC = 25 °C), 8 A (continuous at TC = 100 °C) A
IDM (Drain Current Pulsed) 52 A A
VGS (Gate-Source Voltage) ±25 V V
PTOT (Total Power Dissipation at TC = 25 °C) 25 W W
Tj (Operating Junction Temperature Range) -55 to 150 °C °C
Rthj-case (Thermal Resistance Junction-Case) 5 °C/W °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W °C/W

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance and optimized switching characteristics
  • High efficiency in high-power converter applications

Applications

  • Switching applications
  • LCC (Load Commutated Chopper) converters
  • Resonant converters
  • High-efficiency power management systems

Q & A

  1. What is the typical on-resistance of the STF18NM60ND MOSFET?

    The typical on-resistance (RDS(on)) of the STF18NM60ND is 0.25 Ω.

  2. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 13 A.

  3. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 52 A.

  4. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±25 V.

  5. What are the thermal resistance values for junction-case and junction-ambient?

    The thermal resistance junction-case (Rthj-case) is 5 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.

  6. What are the typical switching times for turn-on and turn-off?

    The typical turn-on delay time (td(on)) is 12 ns, and the typical turn-off delay time (td(off)) is 47 ns.

  7. Is the STF18NM60ND MOSFET avalanche tested?

    Yes, the STF18NM60ND is 100% avalanche tested.

  8. What is the package type of the STF18NM60ND?

    The STF18NM60ND is packaged in a TO-220FP package.

  9. What are some common applications for the STF18NM60ND?

    Common applications include switching applications, LCC converters, resonant converters, and high-efficiency power management systems.

  10. Does the STF18NM60ND have any special protection features?

    Yes, it has a Zener-protected gate.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF18NM60ND STF28NM60ND STF10NM60ND STF11NM60ND STF13NM60ND STF15NM60ND STF18NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 23A (Tc) 8A (Tc) 10A (Tc) 11A (Tc) 14A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V 150mOhm @ 11.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V 380mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V 285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 62.5 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V 24.5 nC @ 10 V 40 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1030 pF @ 50 V 2090 pF @ 100 V 540 pF @ 50 V 850 pF @ 50 V 845 pF @ 50 V 1250 pF @ 50 V 1000 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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