Overview
The STF10NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced MDmesh II technology. This device features a new strip-layout vertical structure, which enhances its electrical characteristics, particularly in terms of low on-resistance and superior switching performance. The STF10NM60ND is available in the TO-220FP package and is ideal for various high-power switching applications, including bridge topologies and Zero Voltage Switching (ZVS) phase-shift converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current at TC = 25°C (ID) | 8 | A |
| Continuous Drain Current at TC = 100°C (ID) | 5 | A |
| Pulsed Drain Current (IDM) | 32 | A |
| Total Power Dissipation at TC = 25°C (PTOT) | 25 | W |
| Static Drain-Source On Resistance (RDS(on)) | 0.57 Ω (typ), 0.6 Ω (max) | Ω |
| Gate Threshold Voltage (VGS(th)) | 3-5 V | V |
| Maximum Operating Junction Temperature (TJ) | 150 | °C |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.79 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 | °C/W |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt avalanche capabilities
- 100% avalanche tested
- Fast-recovery body diode
- Low on-resistance (RDS(on))
- High dv/dt ruggedness
Applications
- Switching applications
- Bridge topologies
- Zero Voltage Switching (ZVS) phase-shift converters
Q & A
- What is the maximum drain-source voltage (VDS) of the STF10NM60ND?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current at TC = 25°C for the STF10NM60ND?
The continuous drain current at TC = 25°C is 8 A.
- What is the typical static drain-source on resistance (RDS(on)) of the STF10NM60ND?
The typical static drain-source on resistance (RDS(on)) is 0.57 Ω.
- What are the key features of the STF10NM60ND?
The key features include low input capacitance and gate charge, low gate input resistance, high dv/dt avalanche capabilities, 100% avalanche testing, a fast-recovery body diode, low on-resistance, and high dv/dt ruggedness.
- What are the typical applications of the STF10NM60ND?
The typical applications include switching applications, bridge topologies, and Zero Voltage Switching (ZVS) phase-shift converters.
- What is the maximum operating junction temperature (TJ) for the STF10NM60ND?
The maximum operating junction temperature (TJ) is 150°C.
- What is the thermal resistance, junction-to-case (RthJC), for the STF10NM60ND?
The thermal resistance, junction-to-case (RthJC), is 1.79 °C/W.
- What is the thermal resistance, junction-to-ambient (RthJA), for the STF10NM60ND when mounted on a 1 inch^2 FR-4, 2 Oz copper board?
The thermal resistance, junction-to-ambient (RthJA), is 50 °C/W.
- What is the package type for the STF10NM60ND?
The package type is TO-220FP.
- What is the total power dissipation at TC = 25°C for the STF10NM60ND?
The total power dissipation at TC = 25°C is 25 W.
