STF10NM60ND
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STMicroelectronics STF10NM60ND

Manufacturer No:
STF10NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 8A TO220FP
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STF10NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced MDmesh II technology. This device features a new strip-layout vertical structure, which enhances its electrical characteristics, particularly in terms of low on-resistance and superior switching performance. The STF10NM60ND is available in the TO-220FP package and is ideal for various high-power switching applications, including bridge topologies and Zero Voltage Switching (ZVS) phase-shift converters.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current at TC = 25°C (ID) 8 A
Continuous Drain Current at TC = 100°C (ID) 5 A
Pulsed Drain Current (IDM) 32 A
Total Power Dissipation at TC = 25°C (PTOT) 25 W
Static Drain-Source On Resistance (RDS(on)) 0.57 Ω (typ), 0.6 Ω (max)
Gate Threshold Voltage (VGS(th)) 3-5 V V
Maximum Operating Junction Temperature (TJ) 150 °C
Thermal Resistance, Junction-to-Case (RthJC) 1.79 °C/W
Thermal Resistance, Junction-to-Ambient (RthJA) 50 °C/W

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt avalanche capabilities
  • 100% avalanche tested
  • Fast-recovery body diode
  • Low on-resistance (RDS(on))
  • High dv/dt ruggedness

Applications

  • Switching applications
  • Bridge topologies
  • Zero Voltage Switching (ZVS) phase-shift converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF10NM60ND?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current at TC = 25°C for the STF10NM60ND?

    The continuous drain current at TC = 25°C is 8 A.

  3. What is the typical static drain-source on resistance (RDS(on)) of the STF10NM60ND?

    The typical static drain-source on resistance (RDS(on)) is 0.57 Ω.

  4. What are the key features of the STF10NM60ND?

    The key features include low input capacitance and gate charge, low gate input resistance, high dv/dt avalanche capabilities, 100% avalanche testing, a fast-recovery body diode, low on-resistance, and high dv/dt ruggedness.

  5. What are the typical applications of the STF10NM60ND?

    The typical applications include switching applications, bridge topologies, and Zero Voltage Switching (ZVS) phase-shift converters.

  6. What is the maximum operating junction temperature (TJ) for the STF10NM60ND?

    The maximum operating junction temperature (TJ) is 150°C.

  7. What is the thermal resistance, junction-to-case (RthJC), for the STF10NM60ND?

    The thermal resistance, junction-to-case (RthJC), is 1.79 °C/W.

  8. What is the thermal resistance, junction-to-ambient (RthJA), for the STF10NM60ND when mounted on a 1 inch^2 FR-4, 2 Oz copper board?

    The thermal resistance, junction-to-ambient (RthJA), is 50 °C/W.

  9. What is the package type for the STF10NM60ND?

    The package type is TO-220FP.

  10. What is the total power dissipation at TC = 25°C for the STF10NM60ND?

    The total power dissipation at TC = 25°C is 25 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF10NM60ND STF13NM60ND STF11NM60ND STF15NM60ND STF18NM60ND STF10NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 11A (Tc) 10A (Tc) 14A (Tc) 13A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 299mOhm @ 7A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 24.5 nC @ 10 V 30 nC @ 10 V 40 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V 845 pF @ 50 V 850 pF @ 50 V 1250 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 30W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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