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STF11NM60ND
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STMicroelectronics STF11NM60ND

Manufacturer No:
STF11NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 10A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF11NM60ND is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced FDmesh II technology. This device features a new strip-layout vertical structure, which enhances its switching performance and reduces on-resistance. It is particularly suited for applications requiring high efficiency and reliability, such as bridge topologies and Zero-Voltage Switching (ZVS) phase-shift converters.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)10 A
RDS(on) (On-Resistance)0.37 Ω (typ.)
PackageTO-220FP, TO-220, I2PAK, IPAK, DPAK
Operating Temperature Range-55°C to 150°C
Gate ChargeLow gate charge and input capacitance
Avalanche Testing100% avalanche tested
RoHS ComplianceEcopack2

Key Features

  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance (RDS(on))
  • 100% avalanche tested
  • High dv/dt ruggedness

Applications

The STF11NM60ND is ideal for various high-power applications, including:

  • Bridge topologies
  • Zero-Voltage Switching (ZVS) phase-shift converters
  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the maximum drain-source voltage of the STF11NM60ND?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STF11NM60ND?
    The typical on-resistance (RDS(on)) is 0.37 Ω.
  3. What package options are available for the STF11NM60ND?
    The STF11NM60ND is available in TO-220FP, TO-220, I2PAK, IPAK, and DPAK packages.
  4. Is the STF11NM60ND RoHS compliant?
    Yes, the STF11NM60ND is RoHS compliant with an Ecopack2 rating.
  5. What are the key features of the STF11NM60ND?
    The key features include a fast-recovery body diode, low gate charge and input capacitance, low on-resistance, 100% avalanche testing, and high dv/dt ruggedness.
  6. What are some typical applications for the STF11NM60ND?
    Typical applications include bridge topologies, ZVS phase-shift converters, SMPS, data centers, and solar microinverters.
  7. What is the operating temperature range of the STF11NM60ND?
    The operating temperature range is from -55°C to 150°C.
  8. Is the STF11NM60ND suitable for high-power switching applications?
    Yes, it is designed for high-power switching applications due to its low on-resistance and high dv/dt ruggedness.
  9. Where can I find detailed specifications and datasheets for the STF11NM60ND?
    Detailed specifications and datasheets can be found on the STMicroelectronics website and other electronic component distributors like TME, LCSC, etc.
  10. What technology is used in the STF11NM60ND?
    The STF11NM60ND uses the advanced FDmesh II technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF11NM60ND STF21NM60ND STF13NM60ND STF15NM60ND STF18NM60ND STF10NM60ND STF11NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 17A (Tc) 11A (Tc) 14A (Tc) 13A (Tc) 8A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V 220mOhm @ 8.5A, 10V 380mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 60 nC @ 10 V 24.5 nC @ 10 V 40 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V 1800 pF @ 50 V 845 pF @ 50 V 1250 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 25W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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