STF11NM60ND
  • Share:

STMicroelectronics STF11NM60ND

Manufacturer No:
STF11NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 10A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF11NM60ND is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced FDmesh II technology. This device features a new strip-layout vertical structure, which enhances its switching performance and reduces on-resistance. It is particularly suited for applications requiring high efficiency and reliability, such as bridge topologies and Zero-Voltage Switching (ZVS) phase-shift converters.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)10 A
RDS(on) (On-Resistance)0.37 Ω (typ.)
PackageTO-220FP, TO-220, I2PAK, IPAK, DPAK
Operating Temperature Range-55°C to 150°C
Gate ChargeLow gate charge and input capacitance
Avalanche Testing100% avalanche tested
RoHS ComplianceEcopack2

Key Features

  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance (RDS(on))
  • 100% avalanche tested
  • High dv/dt ruggedness

Applications

The STF11NM60ND is ideal for various high-power applications, including:

  • Bridge topologies
  • Zero-Voltage Switching (ZVS) phase-shift converters
  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the maximum drain-source voltage of the STF11NM60ND?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STF11NM60ND?
    The typical on-resistance (RDS(on)) is 0.37 Ω.
  3. What package options are available for the STF11NM60ND?
    The STF11NM60ND is available in TO-220FP, TO-220, I2PAK, IPAK, and DPAK packages.
  4. Is the STF11NM60ND RoHS compliant?
    Yes, the STF11NM60ND is RoHS compliant with an Ecopack2 rating.
  5. What are the key features of the STF11NM60ND?
    The key features include a fast-recovery body diode, low gate charge and input capacitance, low on-resistance, 100% avalanche testing, and high dv/dt ruggedness.
  6. What are some typical applications for the STF11NM60ND?
    Typical applications include bridge topologies, ZVS phase-shift converters, SMPS, data centers, and solar microinverters.
  7. What is the operating temperature range of the STF11NM60ND?
    The operating temperature range is from -55°C to 150°C.
  8. Is the STF11NM60ND suitable for high-power switching applications?
    Yes, it is designed for high-power switching applications due to its low on-resistance and high dv/dt ruggedness.
  9. Where can I find detailed specifications and datasheets for the STF11NM60ND?
    Detailed specifications and datasheets can be found on the STMicroelectronics website and other electronic component distributors like TME, LCSC, etc.
  10. What technology is used in the STF11NM60ND?
    The STF11NM60ND uses the advanced FDmesh II technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$4.59
132

Please send RFQ , we will respond immediately.

Same Series
STF11NM60ND
STF11NM60ND
MOSFET N-CH 600V 10A TO220FP
STP11NM60ND
STP11NM60ND
MOSFET N-CH 600V 10A TO220AB
STU11NM60ND
STU11NM60ND
MOSFET N-CH 600V 10A IPAK
STI11NM60ND
STI11NM60ND
MOSFET N-CH 600V 10A I2PAK

Similar Products

Part Number STF11NM60ND STF21NM60ND STF13NM60ND STF15NM60ND STF18NM60ND STF10NM60ND STF11NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 17A (Tc) 11A (Tc) 14A (Tc) 13A (Tc) 8A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V 220mOhm @ 8.5A, 10V 380mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V 290mOhm @ 6.5A, 10V 550mOhm @ 4A, 10V 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 60 nC @ 10 V 24.5 nC @ 10 V 40 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V 1800 pF @ 50 V 845 pF @ 50 V 1250 pF @ 50 V 1030 pF @ 50 V 540 pF @ 50 V 850 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 25W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
MC34063ABD
MC34063ABD
STMicroelectronics
IC REG BUCK BST ADJ 1.5A 8SO
LDL1117S33R
LDL1117S33R
STMicroelectronics
IC REG LINEAR 3.3V 1.2A SOT223
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN