STF21NM60ND
  • Share:

STMicroelectronics STF21NM60ND

Manufacturer No:
STF21NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF21NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is part of the FDmesh™ II series and is available in the TO-220FP package. It is designed to offer extremely low on-resistance and superior switching performance, making it ideal for various high-power applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Drain Current (ID) at TC = 25 °C17A
Drain Current (ID) at TC = 100 °C10A
Pulsed Drain Current (IDM)68A
On-Resistance (RDS(on))0.22Ω
Thermal Resistance Junction-Case (Rthj-case)4.17°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)50°C/W
Maximum Operating Junction Temperature (TJ)150°C
Avalanche Current (IAS)8.5A
Single Pulse Avalanche Energy (EAS)610mJ

Key Features

  • Intrinsic fast-recovery body diode
  • Worldwide best RDS(on)*area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities

Applications

The STF21NM60ND is suitable for a variety of high-power switching applications, including bridge topologies and Zero Voltage Switching (ZVS) phase-shift converters.

Q & A

  1. What is the maximum drain-source voltage of the STF21NM60ND?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance (RDS(on)) of the STF21NM60ND?
    The typical on-resistance (RDS(on)) is 0.22 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current at 25 °C is 17 A.
  4. What is the maximum operating junction temperature?
    The maximum operating junction temperature (TJ) is 150 °C.
  5. What are the key features of the STF21NM60ND?
    Key features include an intrinsic fast-recovery body diode, low input capacitance and gate charge, and high dv/dt and avalanche capabilities.
  6. In which package is the STF21NM60ND available?
    The STF21NM60ND is available in the TO-220FP package.
  7. What are the typical applications for the STF21NM60ND?
    Typical applications include switching applications, bridge topologies, and ZVS phase-shift converters.
  8. What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 4.17 °C/W.
  9. What is the single pulse avalanche energy (EAS) of the STF21NM60ND?
    The single pulse avalanche energy (EAS) is 610 mJ.
  10. Is the STF21NM60ND 100% avalanche tested?
    Yes, the STF21NM60ND is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$5.98
37

Please send RFQ , we will respond immediately.

Same Series
1824815
1824815
TERM BLK 9POS SIDE ENTRY 5MM SMD
STB21NM60ND
STB21NM60ND
MOSFET N-CH 600V 17A D2PAK
STW21NM60ND
STW21NM60ND
MOSFET N-CH 600V 17A TO247-3
STP21NM60ND
STP21NM60ND
MOSFET N-CH 600V 17A TO220AB

Similar Products

Part Number STF21NM60ND STF28NM60ND STF23NM60ND STF26NM60ND STF25NM60ND STF22NM60ND STF11NM60ND STF21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Active Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 23A (Tc) 19.5A (Tc) 21A (Tc) 21A (Tc) 17A (Tc) 10A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 150mOhm @ 11.5A, 10V 180mOhm @ 10A, 10V 175mOhm @ 10.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 450mOhm @ 5A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 62.5 nC @ 10 V 70 nC @ 10 V 54.6 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 30 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 2090 pF @ 100 V 2050 pF @ 50 V 1817 pF @ 100 V 2400 pF @ 50 V 1800 pF @ 50 V 850 pF @ 50 V 1900 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 35W (Tc) 35W (Tc) 40W (Tc) 30W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
L9680
L9680
STMicroelectronics
IC INTERFACE SPECIALIZED 100TQFP
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA