STF21NM60ND
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STMicroelectronics STF21NM60ND

Manufacturer No:
STF21NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO220FP
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STF21NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is part of the FDmesh™ II series and is available in the TO-220FP package. It is designed to offer extremely low on-resistance and superior switching performance, making it ideal for various high-power applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±25V
Drain Current (ID) at TC = 25 °C17A
Drain Current (ID) at TC = 100 °C10A
Pulsed Drain Current (IDM)68A
On-Resistance (RDS(on))0.22Ω
Thermal Resistance Junction-Case (Rthj-case)4.17°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)50°C/W
Maximum Operating Junction Temperature (TJ)150°C
Avalanche Current (IAS)8.5A
Single Pulse Avalanche Energy (EAS)610mJ

Key Features

  • Intrinsic fast-recovery body diode
  • Worldwide best RDS(on)*area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities

Applications

The STF21NM60ND is suitable for a variety of high-power switching applications, including bridge topologies and Zero Voltage Switching (ZVS) phase-shift converters.

Q & A

  1. What is the maximum drain-source voltage of the STF21NM60ND?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance (RDS(on)) of the STF21NM60ND?
    The typical on-resistance (RDS(on)) is 0.22 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current at 25 °C is 17 A.
  4. What is the maximum operating junction temperature?
    The maximum operating junction temperature (TJ) is 150 °C.
  5. What are the key features of the STF21NM60ND?
    Key features include an intrinsic fast-recovery body diode, low input capacitance and gate charge, and high dv/dt and avalanche capabilities.
  6. In which package is the STF21NM60ND available?
    The STF21NM60ND is available in the TO-220FP package.
  7. What are the typical applications for the STF21NM60ND?
    Typical applications include switching applications, bridge topologies, and ZVS phase-shift converters.
  8. What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 4.17 °C/W.
  9. What is the single pulse avalanche energy (EAS) of the STF21NM60ND?
    The single pulse avalanche energy (EAS) is 610 mJ.
  10. Is the STF21NM60ND 100% avalanche tested?
    Yes, the STF21NM60ND is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF21NM60ND STF28NM60ND STF23NM60ND STF26NM60ND STF25NM60ND STF22NM60ND STF11NM60ND STF21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Active Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 23A (Tc) 19.5A (Tc) 21A (Tc) 21A (Tc) 17A (Tc) 10A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8.5A, 10V 150mOhm @ 11.5A, 10V 180mOhm @ 10A, 10V 175mOhm @ 10.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 450mOhm @ 5A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 62.5 nC @ 10 V 70 nC @ 10 V 54.6 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 30 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 2090 pF @ 100 V 2050 pF @ 50 V 1817 pF @ 100 V 2400 pF @ 50 V 1800 pF @ 50 V 850 pF @ 50 V 1900 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 35W (Tc) 35W (Tc) 40W (Tc) 30W (Tc) 25W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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