MCH3477-TL-W
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onsemi MCH3477-TL-W

Manufacturer No:
MCH3477-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 4.5A SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MCH3477-TL-W is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for general-purpose switching applications and is known for its reliability and efficiency. The MCH3477-TL-W features a compact surface mount package, making it suitable for a wide range of electronic systems where space is a concern.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Continuous Drain Current (Id) @ 25°C4.5 A
Gate-Source Threshold Voltage (Vgs th)400 mV
Gate Charge (Qg)5.1 nC
Maximum Operating Temperature+150°C
Power Dissipation (Pd)1 W
Maximum Gate-Source Voltage (Vgs Max)±12 V

Key Features

  • Compact surface mount package for space-efficient designs.
  • High continuous drain current of 4.5 A at 25°C.
  • Low gate-source threshold voltage of 400 mV for easy switching.
  • High maximum operating temperature of +150°C, suitable for demanding environments.
  • Low power dissipation of 1 W, contributing to energy efficiency.

Applications

The MCH3477-TL-W is versatile and can be used in a variety of applications, including general-purpose switching, power management, and motor control. It is particularly suitable for systems requiring high current handling and low power consumption, such as in automotive, industrial, and consumer electronics.

Q & A

  1. What is the FET type of the MCH3477-TL-W?
    The MCH3477-TL-W is an N-Channel MOSFET.
  2. What is the maximum drain to source voltage (Vdss) of the MCH3477-TL-W?
    The maximum drain to source voltage (Vdss) is 20 V.
  3. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 4.5 A.
  4. What is the gate-source threshold voltage (Vgs th) of the MCH3477-TL-W?
    The gate-source threshold voltage (Vgs th) is 400 mV.
  5. What is the maximum operating temperature of the MCH3477-TL-W?
    The maximum operating temperature is +150°C.
  6. What is the power dissipation (Pd) of the MCH3477-TL-W?
    The power dissipation (Pd) is 1 W.
  7. What is the maximum gate-source voltage (Vgs Max) of the MCH3477-TL-W?
    The maximum gate-source voltage (Vgs Max) is ±12 V.
  8. In what type of package is the MCH3477-TL-W available?
    The MCH3477-TL-W is available in a surface mount package.
  9. What are some common applications of the MCH3477-TL-W?
    The MCH3477-TL-W is commonly used in general-purpose switching, power management, and motor control applications.
  10. Why is the MCH3477-TL-W suitable for demanding environments?
    The MCH3477-TL-W is suitable for demanding environments due to its high maximum operating temperature and low power dissipation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:38mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.1 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70FL/MCPH3
Package / Case:SOT-23-3 Flat Leads
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Same Series
MCH3477-TL-H
MCH3477-TL-H
MOSFET N-CH 20V 4.5A SC70
MCH3477-TL-E
MCH3477-TL-E
MOSFET N-CH 20V 4.5A SC70

Similar Products

Part Number MCH3477-TL-W MCH3478-TL-W MCH3377-TL-W MCH3474-TL-W MCH3475-TL-W MCH3476-TL-W MCH3477-TL-E MCH3477-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Not For New Designs
FET Type N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 30 V 30 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 2A (Ta) 3A (Ta) 4A (Ta) 1.8A (Ta) 2A (Ta) 4.5A (Ta) 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 4V, 10V - 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 38mOhm @ 2A, 4.5V 165mOhm @ 1A, 4.5V 83mOhm @ 1.5A, 4.5V 50mOhm @ 2A, 4.5V 180mOhm @ 900mA, 10V 125mOhm @ 1A, 4.5V 38mOhm @ 2A, 4.5V 38mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA - - 1.3V @ 1mA 2.6V @ 1mA 1.3V @ 1mA - -
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 4.5 V 1.7 nC @ 4.5 V 4.6 nC @ 4.5 V 4.7 nC @ 4.5 V 2 nC @ 10 V 1.8 nC @ 4.5 V 5.1 nC @ 4.5 V 5.1 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±10V ±12V ±20V ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 10 V 130 pF @ 10 V 375 pF @ 10 V 430 pF @ 10 V 88 pF @ 10 V 128 pF @ 10 V 410 pF @ 10 V 410 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1W (Ta) 800mW (Ta) 1W (Ta) 1W (Ta) 800mW (Ta) 800mW (Ta) 1W (Ta) 1W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-70FL/MCPH3 3-MCPH 3-MCPH SC-70FL/MCPH3 SC-70FL/MCPH3 SC-70FL/MCPH3 SC-70FL/MCPH3 SC-70FL/MCPH3
Package / Case SOT-23-3 Flat Leads SC-70, SOT-323 SC-70, SOT-323 SOT-23-3 Flat Leads SOT-23-3 Flat Leads 3-SMD, Flat Lead SOT-23-3 Flat Leads SOT-23-3 Flat Leads

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